Microchip Technology, Inc. Single FETs, MOSFETs TP2502N8-G

Description
P-Channel 20V 630mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
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Description
P-Channel 20V 630mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - TP2502N8-GCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TP2502N8-GCT-ND
Single FETs, MOSFETs TP2502N8-GCT-ND
P-Channel 20V 630mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

P-Channel 20V 630mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

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Single FETs, MOSFETs - TP2502N8-GTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TP2502N8-GTR-ND
Single FETs, MOSFETs TP2502N8-GTR-ND
P-Channel 20V 630mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

P-Channel 20V 630mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

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Single FETs, MOSFETs - TP2502N8-GDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TP2502N8-GDKR-ND
Single FETs, MOSFETs TP2502N8-GDKR-ND
P-Channel 20V 630mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

P-Channel 20V 630mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
Singapore
20V 630MA MOSFET Transistor
278-TP2502N8-G
20V 630MA MOSFET Transistor 278-TP2502N8-G
MOSFET P-CH 20V 630MA TO243AA Product overview: TP2502N8-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 630MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 630MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TP2502N8-G can be used for catalog matching and distributor lookup.

MOSFET P-CH 20V 630MA TO243AA Product overview: TP2502N8-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 630MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 630MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TP2502N8-G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2502N8-G - 1110976-TP2502N8-G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2502N8-G
1110976-TP2502N8-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2502N8-G 1110976-TP2502N8-G
Manufacturer: Microchip Technology Win Source Part Number: 1110976-TP2502N8-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 630mA (Tj) Gate-Source Threshold Voltage: 2.4V @ 1mA Max Input Capacitance: 125pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient

Manufacturer: Microchip Technology
Win Source Part Number: 1110976-TP2502N8-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-243AA (SOT-89)
Dimension: TO-243AA
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 630mA (Tj)
Gate-Source Threshold Voltage: 2.4V @ 1mA
Max Input Capacitance: 125pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TP2502N8-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TP2502N8-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TP2502N8-G
MOSFET P-CH 20V 630MA TO243AA

MOSFET P-CH 20V 630MA TO243AA

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 20V 2Ohm

MOSFET 20V 2Ohm

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Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number TP2502N8-GCT-ND 278-TP2502N8-G 1110976-TP2502N8-G TP2502N8-G TP2502N8-G
Product Name Single FETs, MOSFETs 20V 630MA MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2502N8-G Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel P-Channel; P-Channel
Package Type TO-243AA Tape & Reel (TR) SOT3; SOT89; TO-243AA (SOT-89) TO-243AA
MOSFET Operating Mode Enhancement
V(BR)DSS 20 volts 20 volts
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