The TP2435 is a P-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, and fast switching speeds. It is packaged in a 3-lead SOT-89 case with dimensions of 4.60 mm maximum length, 2.60 mm maximum width, and 1.60 mm maximum height. The device has a drain-to-source breakdown voltage of -350 V, a gate threshold voltage ranging from -1 V to -2.4 V, and a static drain-to-source on-state resistance of up to 15 Ω at -10 V gate bias. It operates over an ambient temperature range of -55°C to +150°C and has a thermal resistance of 133°C/W when mounted on an FR5 board. The part is Pb-free and RoHS-compliant.
This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TP2435 |
| Product Name | -350V P-Channel Enhancement-Mode MOSFET |
| Polarity | P-Channel |
