Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2104K1 TP2104K1

Description
Manufacturer: Microchip Technology Win Source Part Number: 048083-TP2104K1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 360mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 160mA (Tj) Gate-Source Threshold Voltage: 2V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Microchip Technology Win Source Part Number: 048083-TP2104K1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 360mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 160mA (Tj) Gate-Source Threshold Voltage: 2V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2104K1 - 048083-TP2104K1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2104K1
048083-TP2104K1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2104K1 048083-TP2104K1
Manufacturer: Microchip Technology Win Source Part Number: 048083-TP2104K1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 360mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 160mA (Tj) Gate-Source Threshold Voltage: 2V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Microchip Technology
Win Source Part Number: 048083-TP2104K1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 360mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 160mA (Tj)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Input Capacitance: 60pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 048083-TP2104K1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2104K1
Polarity P-Channel; P-Channel
V(BR)DSS 40 volts
PD 360 milliwatts
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