Microchip Technology, Inc. MOSFET TP0620N3-G P003

The TP0620N3-G is a P-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for low-threshold switching applications such as TTL/CMOS interfaces and solid-state relays. It has a drain-to-source breakdown voltage of -200 V, a maximum gate-to-source voltage of ±20 V, and an on-resistance of up to 12 Ω at -10 V gate drive. The device features a threshold voltage of -2.4 V max, input capacitance of 85 pF typ, and operates from -55°C to +150°C. It is RoHS compliant and packaged in a 3-lead TO-92 case with dimensions of 5.08 mm height, 3.94 mm width, and 3.81 mm pitch. The device supports continuous drain current of -175 mA at 25°C and is rated for a maximum power dissipation of 1 W.