Microchip Technology, Inc. MOSFET TP0620N3-G P002

The TP0620N3-G is a P-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for low-threshold switching applications such as TTL and CMOS logic interfaces, solid-state relays, and battery-operated systems. It has a drain-to-source breakdown voltage of -200 V, a maximum gate-to-source voltage of ±20 V, and an on-resistance of up to 12 Ω at -10 V gate voltage. The device features a maximum threshold voltage of -2.4 V, an input capacitance of 85 pF, and operates across a temperature range of -55°C to +150°C. The -G suffix indicates RoHS compliance. |refusal_reason: null|part_found: true|series_fallback: false