P-Channel 40V 430mA (Tj) 740mW (Ta) Through Hole TO-92-3
Manufacturer: Microchip Technology
Win Source Part Number: 1110966-TP0604N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 740mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 430mA (Tj)
Gate-Source Threshold Voltage: 2.4V @ 1mA
Max Input Capacitance: 150pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
MOSFET, P-CH, 40V, 0.43A, 150DEG C/0.74W; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:430mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V RoHS Compliant: Yes
MOSFET P-CH 40V 430MA TO92-3
| DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | TP0604N3-G-ND | 1110966-TP0604N3-G | 53Y4264 | TP0604N3-G | TP0604N3-G |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP0604N3-G | Mosfet, P-Ch, 40V, 0.43A, 150Deg C/0.74W; Channel Type Microchip | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | |||
| Package Type | TO-92; TO-226-3, TO-92-3 (TO-226AA) | TO-92; SOT3; TO-92-3 | TO-3 | TO-92; TO-226-3, TO-92-3 (TO-226AA) | |
| V(BR)DSS | 40 volts | ||||
| PD | 740 milliwatts |
