MOSFET N-CH 350V 230MA TO243AA Product overview: TN5335N8-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 350V, 230MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 350V, 230MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TN5335N8-G can be used for catalog matching and distributor lookup.
N-Channel 350V 230mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
N-Channel 350V 230mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
N-Channel 350V 230mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
Manufacturer: Microchip Technology
Win Source Part Number: 1271493-TN5335N8-G
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.supertex.com
Manufacturer Package: TO-243AA
Power Dissipation (Maximum): 1.6W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 350V
Id - Continuous Drain Current: 230mA
Rds On (Maximum) at Id, Vgs: 15Ohm at 200mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 2V at 1mA
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 110pF at 25V
MOSFET N-CH 350V 230MA TO243AA
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-TN5335N8-G | TN5335N8-GCT-ND | 1271493-TN5335N8-G | TN5335N8-G | TN5335N8-G |
| Product Name | 350V 230MA MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - TN5335N8-G | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | Enhancement | |||
| V(BR)DSS | 350 volts | 350 volts | |||
| PD | 1.6 milliwatts | 1600 milliwatts |