Manufacturer: Microchip Technology
Win Source Part Number: 1110811-TN5335K1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 360mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23 (TO-236AB)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 350V
Continuous Drain Current at 25°C: 110mA (Tj)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Input Capacitance: 110pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15 Ohm @ 200mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
MOSFET N-CH 350V 110MA SOT23 Product overview: TN5335K1-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 350V, 110MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 350V, 110MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TN5335K1-G can be used for catalog matching and distributor lookup.
MOSFET N-CH 350V 110MA SOT23
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 350V
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 350V
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 350V
N-Channel 350V 110mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)
N-Channel 350V 110mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)
N-Channel 350V 110mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)
MOSFET, 350V, 0.11A, 150DEG C, 0.36W; Transistor Polarity:N Channel; Continuous Drain Current Id:110mA; Drain Source Voltage Vds:350V; On Resistance Rds(on):15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
MOSFET N-CH 350V 110MA SOT23
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1110811-TN5335K1-G | 278-TN5335K1-G | TN5335K1-G | 2648925P | TN5335K1-GDKR-ND | 72AC6727 | TN5335K1-G | TN5335K1-G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN5335K1-G | 350V 110MA SOT23 MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | Mosfet, 350V, 0.11A, 150Deg C, 0.36W; Transistor Polarity Microchip | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 350 volts | 350 volts | 350 volts | |||||
| PD | 360 milliwatts | 360 milliwatts | 360 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; SOT23; SOT-23 (TO-236AB) | Tape & Reel (TR) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; SOT-23 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | SOT23; TO-236-3, SC-59, SOT-23-3 |
