Microchip Technology, Inc. Single FETs, MOSFETs TN5335K1-G

MOSFET N-CH 350V 110MA SOT23

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 350V

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 350V

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 350V

MOSFET N-CH 350V 110MA SOT23 Product overview: TN5335K1-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 350V, 110MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 350V, 110MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TN5335K1-G can be used for catalog matching and distributor lookup.

N-Channel 350V 110mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)

N-Channel 350V 110mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)

N-Channel 350V 110mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)

Manufacturer: Microchip Technology
Win Source Part Number: 1110811-TN5335K1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 360mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23 (TO-236AB)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 350V
Continuous Drain Current at 25°C: 110mA (Tj)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Input Capacitance: 110pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15 Ohm @ 200mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance