Microchip Technology, Inc. MOSFET TN2640N3-G P014

The TN2640N3-G is an N-channel enhancement-mode DMOS FET in a 3-lead TO-92 package, designed for power switching and amplification applications such as DC-DC converters, solid state relays, and analog switches. It features a maximum breakdown voltage of 400 V, a low on-resistance of 5.0 Ω, a gate threshold voltage of 2.0 V max, and an input capacitance of 225 pF. The device supports direct logic-level drive, exhibits low input and output leakage, and is RoHS compliant. It dissipates up to 2.5 W of power, enabling efficient surface-mount use in compact designs.