Microchip Technology, Inc. MOSFET TN2640N3-G P003

TN2640N3-G is an N-channel enhancement-mode DMOS FET in a 3-lead TO-92 package, designed for power switching and amplification applications such as DC-DC converters, solid state relays, and analog switches. It features a maximum breakdown voltage of 400 V, an on-resistance of 5.0 Ω, a gate threshold voltage of 2.0 V max, an input capacitance of 225 pF, and a power dissipation rating of 2.5 W. The device supports logic-level gate drive, has low input and output leakage, and is RoHS compliant. It is free from secondary breakdown and optimized for fast switching and high efficiency.