The TN2524 is an N-channel enhancement-mode vertical DMOS FET designed for low-threshold switching applications, including TTL and CMOS logic interfaces, solid-state relays, and battery-operated systems. It is packaged in a 3-lead SOT-89 format with dimensions of 4.60 mm maximum length, 2.60 mm maximum width, and 1.60 mm maximum height. The device has a drain-to-source breakdown voltage of 240 V, a maximum gate-to-source voltage of ±20 V, and a gate threshold voltage ranging from 0.6 V to 2 V. It exhibits a maximum on-state resistance of 6 Ω at V_GS = 10 V and I_D = 500 mA, with a maximum input capacitance of 125 pF at V_GS = 0 V. The operating and storage temperature range is −55°C to +150°C, and the thermal resistance is 73 °C/W. The part is Pb-free and RoHS-compliant.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN2524 |
| Product Name | 240V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
