The TN2504 is a 40V N-channel enhancement-mode vertical DMOS FET designed for low-threshold switching applications, including TTL and CMOS interfaces, solid-state relays, and battery-operated systems. It is packaged in a 3-lead SOT-89 case with dimensions up to 4.60 mm in length, 2.60 mm in width, and 1.60 mm in height. The device has a maximum gate-to-source voltage of ±20 V, a gate threshold voltage of 1.6 V max, and a static drain-to-source on-resistance of 1.0 Ω max at 10 V gate voltage and 1.5 A drain current. It operates reliably from -55°C to +150°C ambient temperature, with a thermal resistance of 73 °C/W. The part is RoHS-compliant and Pb-free.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN2504 |
| Product Name | 40V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
