The TN2501 is an N-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high input impedance, and fast switching speeds. It is packaged in a 3-lead SOT-89 and has a drain-to-source breakdown voltage of 18 V, a gate threshold voltage range of 0.3 V to 1 V, and a static drain-to-source on-state resistance of 2.5 Ω at 3 V gate voltage and 200 mA drain current. The device features a maximum input capacitance of 110 pF, operates from -55°C to +150°C, and has a thermal resistance of 133 °C/W. It meets RoHS compliance and is free from thermal runaway and secondary breakdown.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN2501 |
| Product Name | 18V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
