The TN2435 is an N-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, and fast switching speeds. It is packaged in a 3-lead SOT-89 package with dimensions of 4.60 mm maximum length, 2.60 mm maximum width, and 1.60 mm maximum height. The device has a drain-to-source breakdown voltage of 350 V, a gate-to-source threshold voltage range of 0.8 V to 2.5 V, and a static drain-to-source on-state resistance of 6 Ω at V_GS = 10 V and I_D = 750 mA. It operates within an ambient temperature range of -55°C to +150°C, with a maximum junction-to-ambient thermal resistance of 73 °C/W. The TN2435 is RoHS-compliant and rated for operation without thermal runaway or secondary breakdown.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN2435 |
| Product Name | 350V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
