The TN2425 is an N-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, and fast switching speeds. It is housed in a 3-lead SOT-89 package measuring 4.60 mm max in length, 2.60 mm max in width, and 1.60 mm max in height. The device has a drain-to-source breakdown voltage of 250 V, a gate threshold voltage range of 0.8 to 2.5 V, and a static drain-to-source on-state resistance of 3.5 Ω at V₍₎ = 10 V and I₍ = 500 mA. It operates over a junction temperature range of -55°C to +150°C with a thermal resistance of 73 °C/W. The part complies with RoHS standards and is Pb-free.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN2425 |
| Product Name | 250V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
