The TN2130 is an N-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, and fast switching speeds. It is packaged in a 3-lead SOT-23 with dimensions of 2.90mm x 1.30mm body and a maximum height of 1.12mm. The device has a drain-to-source breakdown voltage of 300V, a gate threshold voltage ranging from 0.7V to 2.4V across temperature, and a static drain-to-source on-state resistance of up to 66Ω at 150°C. It features an integral source-drain diode with a forward voltage drop of 1.8V and reverse recovery time of 450ns. The TN2130 operates over an ambient temperature range of -55°C to +150°C and has a thermal resistance of 203°C/W. The part meets RoHS compliance and is qualified for automotive applications with 100% testing at -55°C, 25°C, and 150°C.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN2130 |
| Product Name | 300V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
