The TN0702 is an N-channel enhancement-mode vertical DMOS FET designed for low-threshold switching applications, including TTL and CMOS logic interfaces, solid state relays, and battery-operated systems. It is housed in a TO-92 package with dimensions of 0.210 inches in height, 0.205 inches in body width, and 0.105 inches in lead spacing. The device has a drain-to-source breakdown voltage of 20V, a maximum on-resistance of 1.3Ω at VGS = 5V, and a continuous drain current of 530mA at 25°C. The gate threshold voltage ranges from 0.5V to 1.0V, and the input capacitance is 130pF typical. It operates over a temperature range of -55°C to +150°C and is RoHS compliant. The device meets TO-92 JEDEC package standards and has a thermal resistance of 132°C/W.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN0702 |
| Product Name | 20V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
