N-channel enhancement-mode vertical DMOS FET for switching and amplifying applications, in a TO-92 package measuring 5.21 mm in height, with a drain-to-source breakdown voltage of 200 V, a maximum on-resistance of 8.0 Ω at 5.0 V gate-source voltage, and a threshold voltage of 1.6 V maximum. The device is RoHS compliant and rated for operation from -55°C to 150°C.
MOSFET N-CH Enhancmnt Mode MOSFET
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN0620N3-G P005 |
| Product Name | MOSFET |
