The TN0610 is an N-channel enhancement-mode vertical DMOS FET designed for low-threshold switching applications, including TTL and CMOS interfaces, solid-state relays, and battery-operated systems. It is packaged in a 3-lead TO-92 case with a drain-to-source breakdown voltage of 100 V, a maximum gate-to-source voltage of ±20 V, and an operating ambient temperature range of -55°C to +150°C. The device has a maximum threshold voltage of 2 V, a typical input capacitance of 100 pF, and a static drain-to-source on-state resistance of 1.5 Ω at V_GS = 5 V and I_D = 750 mA. It meets RoHS compliance as indicated by the Pb-free JEDEC e3 designator and has a thermal resistance of 132 °C/W in the TO-92 package.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN0610 |
| Product Name | 100V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
