The TN0606 is a 60V N-channel enhancement-mode vertical DMOS FET designed for low-threshold switching applications such as TTL and CMOS logic interfaces, solid-state relays, and battery-operated systems. It is packaged in a 3-lead TO-92 case with a maximum operating ambient temperature of +150°C and a thermal resistance of 132°C/W. The device has a gate threshold voltage of 0.6V to 2V, a static drain-to-source on-state resistance of 1Ω to 2Ω, and a typical input capacitance of 100pF. It is free from secondary breakdown and exhibits a positive temperature coefficient for thermal stability. The part is RoHS-compliant and Pb-free.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN0606 |
| Product Name | 60V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
