Microchip Technology, Inc. 60V 350MA MOSFET Transistor TN0106N3-G

MOSFET N-CH 60V 350MA TO92-3 Product overview: TN0106N3-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 350MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 350MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TN0106N3-G can be used for catalog matching and distributor lookup.

N-Channel 60V 350mA (Tj) 1W (Tc) Through Hole TO-92-3

Manufacturer: Microchip Technology
Win Source Part Number: 1271444-TN0106N3-G
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.supertex.com
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation (Maximum): 1W
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 350mA
Rds On (Maximum) at Id, Vgs: 3Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 2V at 500μA
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 60pF at 25V