Microchip Technology, Inc. FETs - Single - TN0106N3-G TN0106N3-G

Description
Manufacturer: Microchip Technology Win Source Part Number: 1271444-TN0106N3-G Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Power Dissipation (Maximum): 1W Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 350mA Rds On (Maximum) at Id, Vgs: 3Ohm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 2V at 500μA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 60pF at 25V
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Description
Manufacturer: Microchip Technology Win Source Part Number: 1271444-TN0106N3-G Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Power Dissipation (Maximum): 1W Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 350mA Rds On (Maximum) at Id, Vgs: 3Ohm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 2V at 500μA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 60pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - TN0106N3-G - 1271444-TN0106N3-G - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - TN0106N3-G
1271444-TN0106N3-G
FETs - Single - TN0106N3-G 1271444-TN0106N3-G
Manufacturer: Microchip Technology Win Source Part Number: 1271444-TN0106N3-G Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Power Dissipation (Maximum): 1W Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 350mA Rds On (Maximum) at Id, Vgs: 3Ohm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 2V at 500μA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 60pF at 25V

Manufacturer: Microchip Technology
Win Source Part Number: 1271444-TN0106N3-G
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.supertex.com
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation (Maximum): 1W
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 350mA
Rds On (Maximum) at Id, Vgs: 3Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 2V at 500μA
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 60pF at 25V

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MOSFET, N-CH, 60V, 0.35A, TO-92 ROHS COMPLIANT: YES

MOSFET, N-CH, 60V, 0.35A, TO-92 ROHS COMPLIANT: YES

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Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TN0106N3-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
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MOSFET N-CH 60V 350MA TO92-3

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Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1271444-TN0106N3-G TN0106N3-G-ND 91AH9258 TN0106N3-G TN0106N3-G
Product Name FETs - Single - TN0106N3-G Single FETs, MOSFETs Mosfet, N-Ch, 60V, 0.35A, To-92 Rohs Compliant Microchip MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts
PD 1000 milliwatts
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