Microchip Technology, Inc. MOSFET TN0106N3-G P002

The TN0106N3-G is an N-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for low-threshold switching and amplification applications such as logic-level interfaces, solid-state relays, and battery-operated systems. It has a drain-to-source breakdown voltage of 60 V, a maximum gate-to-source voltage of ±20 V, and a gate threshold voltage of 2.0 V max. The device exhibits a typical on-resistance of 2.0 Ω at 10 V gate-source voltage and 500 mA drain current, with an input capacitance of 50 pF. It operates over a temperature range of -55°C to +150°C, is RoHS compliant, and is free from thermal runaway. Thermal resistance from junction to ambient is 125 °C/W under continuous operation. The part meets the ROHS standard for environmental compliance.