The TN0106 is an N-channel enhancement-mode vertical DMOS FET designed for low-threshold switching and amplification applications, ideal for TTL and CMOS logic interfaces. It is housed in a 3-lead TO-92 package. The device has a drain-to-source breakdown voltage of 60 V, a gate threshold voltage range of 0.6 V to 2 V, and a maximum on-state drain-to-source resistance of 3 Ω at 10 V gate drive and 500 mA drain current. It operates with an ambient temperature range of -55°C to +150°C and has a thermal resistance of 132 °C/W. The part is RoHS-compliant and features low input capacitance of 50 pF typical, fast switching speeds, and freedom from thermal runaway and secondary breakdown.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN0106 |
| Product Name | 60V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
