Microchip Technology, Inc. MOSFET TN0104N3-G P005

N-channel enhancement-mode vertical DMOS FET in TO-92 package with a 40 V drain-to-source breakdown voltage, a maximum gate-to-source threshold voltage of 1.6 V, and a typical on-state resistance of 1.5 Ω at 10 V gate bias and 1.0 A drain current. It features a low input capacitance of 70 pF and a continuous drain current rating of 450 mA in the TO-92 package, suitable for logic-level interfacing and battery-operated systems.