The TC8220 is a two-pair, N- and P-channel enhancement-mode MOSFET with integrated gate-to-source resistors and Zener diode clamps, designed for high voltage pulsing, amplification, and driving piezoelectric transducers. It is housed in a 12-lead DFN package measuring 4.00×4.00 mm with a maximum height of 1.00 mm. The N-channel MOSFETs have a drain-to-source breakdown voltage of 200 V and a maximum on-resistance of 6.5 Ω, while the P-channel MOSFETs have a breakdown voltage of -200 V and a maximum on-resistance of 8.5 Ω. All devices feature fast switching speeds, low input and output capacitance, and operate from -55°C to +150°C. The package is lead-free and RoHS compliant.
TC8220 consists of two pairs of high voltage, low threshold N-channel and P-channel MOSFETs in a 12-Lead DFN package. All MOSFETs have integrated the gate-to-source resistors and gate-to-source Zener diode clamps which are desired for high voltage pulser applications. The complimentary, high-speed, high voltage, gate-clamped N and P-channel MOSFET pairs utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input and output capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TC8220 |
| Product Name | N/P Channel Enhancement-Mode MOSFET w/ Drain Diodes |
| VGS(off) | 2 volts |
