The TC8020 is a six-pair N- and P-channel enhancement-mode MOSFET device with integrated gate-to-source resistors and Zener diode clamps, designed for high-voltage pulsing, amplification, and transducer driving applications. It is packaged in a 56-lead QFN with an 8.00 mm × 8.00 mm body and maximum height of 1.00 mm. Each N-channel MOSFET has a 200 V drain-to-source breakdown voltage and a typical on-state resistance of 6.0 Ω at 4.5 V gate drive, while each P-channel MOSFET has a -200 V breakdown voltage and a typical on-state resistance of 9.5 Ω. The device operates from -55°C to +150°C and has a thermal resistance of 27°C/W. All MOSFET pairs are electrically isolated and feature fast switching speeds and low input/output capacitance.
TC8020 consists of six pairs of high voltage, low threshold N- and P-channel MOSFETs in a 56-lead QFN package. All MOSFETs have integrated gate-to-source resistors and gate-to-source Zener diode clamps which are desired for high voltage pulser applications. The complimentary, high-speed, high voltage, gate-clamped N- and P-channel MOSFET pairs utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input and output capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TC8020 |
| Product Name | Six Pair, N/P Channel Enhancement-Mode MOSFET |
| VGS(off) | 3 volts |
