TC6321 is derived from the TC6320, with its high voltage, low threshold N-channel and P-channel MOSFETs, but offered in a thermally enhanced 5mm x 6mm DFN, with better thermal transfer and higher operating range, to 175°C. Both MOSFETs have integrated GATE-to-SOURCE resistors and GATE-to-SOURCE Zener diode clamps which are desired for high voltage pulser applications. It is a complimentary, high-speed, high voltage, GATE-clamped N- and P-channel MOSFET pair, which utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
Derived from the TC6320
Thermally enhanced 5mm x 6mm DFN
Rated to 175°C
Integrated GATE-to-SOURCE resistor
Integrated GATE-to-SOURCE Zener diode
Low threshold
Low on-resistance
Low input capacitance
Fast switching speeds
Free from secondary breakdown
Low input and output leakage
Independent, electrically isolated N- and P-channels
TC6321 is derived from the TC6320, with its high voltage, low threshold N-channel and P-channel MOSFETs, but offered in a thermally enhanced 5mm x 6mm DFN, with better thermal transfer and higher operating range, to 175°C. Both MOSFETs have integrated GATE-to-SOURCE resistors and GATE-to-SOURCE Zener diode clamps which are desired for high voltage pulser applications. It is a complimentary, high-speed, high voltage, GATE-clamped N- and P-channel MOSFET pair, which utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
- Derived from the TC6320
- Thermally enhanced 5mm x 6mm DFN
- Rated to 175°C
- Integrated GATE-to-SOURCE resistor
- Integrated GATE-to-SOURCE Zener diode
- Low threshold
- Low on-resistance
- Low input capacitance
- Fast switching speeds
- Free from secondary breakdown
- Low input and output leakage
- Independent, electrically isolated N- and P-channels
