The TC6320 is a complementary high-voltage N-channel and P-channel enhancement-mode MOSFET pair with integrated gate-to-source resistors and Zener diode clamps, designed for high-voltage pulser and switching applications. It is available in 8-lead SOIC and 8-lead DFN packages. The N-channel MOSFET has a drain-to-source breakdown voltage of 200 V and an on-resistance of 7 Ω at V_GS = 10 V and I_D = 1 A; the P-channel variant has a breakdown voltage of -200 V and an on-resistance of 8 Ω at V_GS = -10 V and I_D = -1 A. Both devices operate from -55°C to +150°C and meet RoHS compliance. The package thermal resistance is 101 °C/W for SOIC and 44 °C/W for DFN on a 1 oz., four-layer, 3" x 4" PCB.
TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated GATE-to-SOURCE resistors and GATE-to-SOURCE Zener diode clamps which are desired for high voltage pulser applications. It is a complimentary, high-speed, high voltage, GATE-clamped N- and P-channel MOSFET pair, which utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TC6320 |
| Product Name | N/P-Channel Enhancement-Mode Dual MOSFET |
| Polarity | P-Channel |
