The TC2320 is an N-channel and P-channel enhancement-mode dual MOSFET in an 8-lead SOIC package, designed for high-voltage switching and amplification applications. It features a 200 V N-channel and -200 V P-channel drain-to-source breakdown voltage, with static on-state resistances of 7 Ω and 12 Ω respectively at 1 A and -200 mA. Operating ambient and storage temperatures range from -55°C to +150°C, and thermal resistance is 101 °C/W on a 1 oz., four-layer, 3" x 4" PCB. The device meets RoHS compliance and is free from thermal runaway and secondary breakdown. Input capacitance is 110 pF for the N-channel and 125 pF for the P-channel, with typical turn-on and turn-off delays under 30 ns. Independent channels provide electrically isolated switching.
TC2320 consists of a high voltage, low threshold N- and P-channel MOSFET in an 8-Lead SOIC package. This low threshold enhancement-mode (normally-off) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TC2320 |
| Product Name | N/P-Channel Enhancement-Mode Dual MOSFET |
| Polarity | P-Channel |
