The TC1550 is an N- and P-channel enhancement-mode dual MOSFET in an 8-lead SOIC package with a 4.90 mm × 3.90 mm body and a maximum height of 1.75 mm. It features a 500 V drain-to-source breakdown voltage for the N-channel and -500 V for the P-channel, with on-state resistances of 40 to 60 Ω and 80 to 125 Ω respectively at 10 V gate drive. The device has low input capacitance, fast switching speeds, and is free from thermal runaway and secondary breakdown. It is RoHS compliant and operates from -55°C to 150°C.
TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TC1550 |
| Product Name | N/P-Channel Enhancement-Mode Dual MOSFET |
| Polarity | P-Channel |
