The SST39WF800B is a 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared to alternate approaches. The SST39WF800B writes (Program or Erase) with a 1.65-1.95V power supply. This device conforms to JEDEC standard pin assignments for x16 memories.
Additional Features
Organized as 512K x16
Low Power Consumption: Active Current: 5 mA (typical) Standby Current: 5 µA (typical)
Sector-Erase Capability: Uniform 2 KWord sectors
Block-Erase Capability: Uniform 32 KWord blocks
Fast Erase and Word-Program – Sector-Erase Time: 36 ms (typical), Block-Erase Time: 36 ms (typical), Chip-Erase Time: 140 ms (typical), Word-Program Time: 28 µs (typical)
Packages Available: 48-ball TFBGA (6mm x 8mm),48-ball WFBGA (4mm x 6mm), 48-ball XFLGA (5mm x 6mm), 48-ball XFLGA (4mm x 6mm)
All non-Pb (lead-free) devices are RoHS compliant
The SST39WF800B is a 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared to alternate approaches. The SST39WF800B writes (Program or Erase) with a 1.65-1.95V power supply. This device conforms to JEDEC standard pin assignments for x16 memories.
Additional Features
- Organized as 512K x16
- Low Power Consumption: Active Current: 5 mA (typical) Standby Current: 5 µA (typical)
- Sector-Erase Capability: Uniform 2 KWord sectors
- Block-Erase Capability: Uniform 32 KWord blocks
- Fast Erase and Word-Program – Sector-Erase Time: 36 ms (typical), Block-Erase Time: 36 ms (typical), Chip-Erase Time: 140 ms (typical), Word-Program Time: 28 µs (typical)
- Packages Available: 48-ball TFBGA (6mm x 8mm),48-ball WFBGA (4mm x 6mm), 48-ball XFLGA (5mm x 6mm), 48-ball XFLGA (4mm x 6mm)
- All non-Pb (lead-free) devices are RoHS compliant
