Microchip Technology, Inc. 16Mb 1.65-1.95V Parallel Flash SST39WF1602

Description
The SST39WF1602 is a 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39WF1602 writes (Program or Erase) with a 1.65-1.95V power supply. This device conforms to JEDEC standard pin assignments for x16 memories. Additional Features Organized as 1M x16 Low Power Consumption (typical values at 5 MHz)– Active Current: 5 mA (typical)– Standby Current: 5 µA (typical)– Auto Low Power Mode: 5 µA (typical) Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39WF1602– Bottom Block-Protection (bottom 32 KWord)for SST39WF1601 Sector-Erase Capability– Uniform 2 KWord sectors Block-Erase Capability– Uniform 32 KWord blocks Chip-Erase Capability Erase-Suspend/Erase- Resume Capabilities Hardware Reset Pin (RST#) Security-ID Feature– SST: 128 bits; User: 128 bits Fast Erase and Word-Program:– Sector-Erase Time: 36 ms (typical)– Block-Erase Time: 36 ms (typical)– Chip-Erase Time: 140 ms (typical)– Word-Program Time: 28 µs (typical) Packages Available– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (5mm x 6mm)– 48-ball WFBGA (4mm x 6mm) All non-Pb (lead-free) devices are RoHS compliant
Datasheet
Description
The SST39WF1602 is a 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39WF1602 writes (Program or Erase) with a 1.65-1.95V power supply. This device conforms to JEDEC standard pin assignments for x16 memories. Additional Features Organized as 1M x16 Low Power Consumption (typical values at 5 MHz)– Active Current: 5 mA (typical)– Standby Current: 5 µA (typical)– Auto Low Power Mode: 5 µA (typical) Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39WF1602– Bottom Block-Protection (bottom 32 KWord)for SST39WF1601 Sector-Erase Capability– Uniform 2 KWord sectors Block-Erase Capability– Uniform 32 KWord blocks Chip-Erase Capability Erase-Suspend/Erase- Resume Capabilities Hardware Reset Pin (RST#) Security-ID Feature– SST: 128 bits; User: 128 bits Fast Erase and Word-Program:– Sector-Erase Time: 36 ms (typical)– Block-Erase Time: 36 ms (typical)– Chip-Erase Time: 140 ms (typical)– Word-Program Time: 28 µs (typical) Packages Available– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (5mm x 6mm)– 48-ball WFBGA (4mm x 6mm) All non-Pb (lead-free) devices are RoHS compliant
Datasheet

Suppliers

Company
Product
Description
Supplier Links
16Mb 1.65-1.95V Parallel Flash - SST39WF1602 - Microchip Technology, Inc.
Chandler, AZ, United States
16Mb 1.65-1.95V Parallel Flash
SST39WF1602
16Mb 1.65-1.95V Parallel Flash SST39WF1602
The SST39WF1602 is a 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39WF1602 writes (Program or Erase) with a 1.65-1.95V power supply. This device conforms to JEDEC standard pin assignments for x16 memories. Additional Features Organized as 1M x16 Low Power Consumption (typical values at 5 MHz)– Active Current: 5 mA (typical)– Standby Current: 5 µA (typical)– Auto Low Power Mode: 5 µA (typical) Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39WF1602– Bottom Block-Protection (bottom 32 KWord)for SST39WF1601 Sector-Erase Capability– Uniform 2 KWord sectors Block-Erase Capability– Uniform 32 KWord blocks Chip-Erase Capability Erase-Suspend/Erase- Resume Capabilities Hardware Reset Pin (RST#) Security-ID Feature– SST: 128 bits; User: 128 bits Fast Erase and Word-Program:– Sector-Erase Time: 36 ms (typical)– Block-Erase Time: 36 ms (typical)– Chip-Erase Time: 140 ms (typical)– Word-Program Time: 28 µs (typical) Packages Available– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (5mm x 6mm)– 48-ball WFBGA (4mm x 6mm) All non-Pb (lead-free) devices are RoHS compliant

The SST39WF1602 is a 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39WF1602 writes (Program or Erase) with a 1.65-1.95V power supply. This device conforms to JEDEC standard pin assignments for x16 memories.

Additional Features

  • Organized as 1M x16
  • Low Power Consumption (typical values at 5 MHz)– Active Current: 5 mA (typical)– Standby Current: 5 µA (typical)– Auto Low Power Mode: 5 µA (typical)
  • Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39WF1602– Bottom Block-Protection (bottom 32 KWord)for SST39WF1601
  • Sector-Erase Capability– Uniform 2 KWord sectors
  • Block-Erase Capability– Uniform 32 KWord blocks
  • Chip-Erase Capability
  • Erase-Suspend/Erase-Resume Capabilities
  • Hardware Reset Pin (RST#)
  • Security-ID Feature– SST: 128 bits; User: 128 bits
  • Fast Erase and Word-Program:– Sector-Erase Time: 36 ms (typical)– Block-Erase Time: 36 ms (typical)– Chip-Erase Time: 140 ms (typical)– Word-Program Time: 28 µs (typical)
  • Packages Available– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (5mm x 6mm)– 48-ball WFBGA (4mm x 6mm)
  • All non-Pb (lead-free) devices are RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Memory Chips
Product Number SST39WF1602
Product Name 16Mb 1.65-1.95V Parallel Flash
Memory Category Flash
Access Time 70 ns
Endurance 100000 Write/Erase Cycles
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Specs
Memory Category Volatile
Density 0 kbits
Package Type 4.5 ns
View Details
Memory - AM29DL800BT-120WBC - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Access Time 120 ns
Density 8000000 kbits
View Details
Memory - 28375834 A - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1882794P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details