The SST39WF1601 is a 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) device manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and faster erase times compared with alternate approaches. These devices conform to JEDEC standard pin assignments for x16 memories.
Additional Features
Organized as 1M x16
Single Voltage Read and Write Operations– 1.65-1.95V
Superior Reliability
Endurance: 100,000 Cycles (Typical)
Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)
Active Current: 5 mA (typical)
Standby Current: 5 µA (typical)
Auto Low Power Mode: 5 µA (typical)
Hardware Block-Protection/WP# Input Pin
Top Block-Protection (top 32 KWord) for SST39WF1602
Bottom Block-Protection (bottom 32 KWord) for SST39WF1601
Flexible Erase Capabilities
Sector-Erase Capability– Uniform 2 KWord sectors
Block-Erase Capability– Uniform 32 KWord blocks
Chip-Erase Capability
Erase-Suspend/Erase-
Resume Capabilities
Fast Program and Erase Times
Block-Erase Time: 36 ms (typical)
Word-Program Time: 28 µs (typical)
Chip-Erase Time: 140 ms (typical)
Sector-Erase Time: 36 ms (typical)
Other Features
Hardware Reset Pin (RST#)
Latched Address and Data
Fast Read Access Time – 70 ns
Security-ID Feature
Packages Available – 48-ball TFBGA (6mm x 8mm), 48-ball WFBGA (5mm x 6mm), 48-ball WFBGA (4mm x 6mm)
The SST39WF1601 is a 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) device manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and faster erase times compared with alternate approaches. These devices conform to JEDEC standard pin assignments for x16 memories.
Additional Features
- Organized as 1M x16
- Single Voltage Read and Write Operations– 1.65-1.95V
- Superior Reliability
- Endurance: 100,000 Cycles (Typical)
- Greater than 100 years Data Retention
- Low Power Consumption (typical values at 5 MHz)
- Active Current: 5 mA (typical)
- Standby Current: 5 µA (typical)
- Auto Low Power Mode: 5 µA (typical)
- Hardware Block-Protection/WP# Input Pin
- Top Block-Protection (top 32 KWord) for SST39WF1602
- Bottom Block-Protection (bottom 32 KWord) for SST39WF1601
- Flexible Erase Capabilities
- Sector-Erase Capability– Uniform 2 KWord sectors
- Block-Erase Capability– Uniform 32 KWord blocks
- Chip-Erase Capability
- Erase-Suspend/Erase-Resume Capabilities
- Fast Program and Erase Times
- Block-Erase Time: 36 ms (typical)
- Word-Program Time: 28 µs (typical)
- Chip-Erase Time: 140 ms (typical)
- Sector-Erase Time: 36 ms (typical)
- Other Features
- Hardware Reset Pin (RST#)
- Latched Address and Data
- Fast Read Access Time – 70 ns
- Security-ID Feature
- Packages Available – 48-ball TFBGA (6mm x 8mm), 48-ball WFBGA (5mm x 6mm), 48-ball WFBGA (4mm x 6mm)
