Microchip Technology, Inc. 4Mb 2.7-3.6V Parallel Flash SST39VF401C

Description
Additional Features Organized as 256K x16 Single Voltage Read and Write Operations– 2.7-3.6V for SST39VF401C/402C– 3.0-3.6V for SST39LF401C/402C Superior Reliability– Endurance: 100,000 Cycles (Typical)– Greater than 100 years Data Retention Low Power Consumption (typical values at 5 MHz)– Active Current: 5 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical) Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 8 KWord)– Bottom Block-Protection (bottom 8 KWord) Sector-Erase Capability– Uniform 2 KWord sectors Block-Erase Capability– Flexible block architecture; one 8-, two 4-, one 16-, andseven 32-KWord blocks Chip-Erase Capability Erase-Suspend/Erase- Resume Capabilities Hardware Reset Pin (RST#) Latched Address and Data Security-ID Feature– SST: 128 bits; User: 128 words Fast Read Access Time:– 70 ns for SST39VF401C/402C– 55 ns for SST39LF401C/402C Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 µs (typical) Automatic Write Timing– Internal VPP Generation End-of-Write Detection– Toggle Bits– Data# Polling– Ready/Busy# Pin CMOS I/O Compatibility JEDEC Standard– Flash EEPROM Pinouts and command sets Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (4mm x 6mm) All devices are RoHS compliant
Datasheet
Description
Additional Features Organized as 256K x16 Single Voltage Read and Write Operations– 2.7-3.6V for SST39VF401C/402C– 3.0-3.6V for SST39LF401C/402C Superior Reliability– Endurance: 100,000 Cycles (Typical)– Greater than 100 years Data Retention Low Power Consumption (typical values at 5 MHz)– Active Current: 5 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical) Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 8 KWord)– Bottom Block-Protection (bottom 8 KWord) Sector-Erase Capability– Uniform 2 KWord sectors Block-Erase Capability– Flexible block architecture; one 8-, two 4-, one 16-, andseven 32-KWord blocks Chip-Erase Capability Erase-Suspend/Erase- Resume Capabilities Hardware Reset Pin (RST#) Latched Address and Data Security-ID Feature– SST: 128 bits; User: 128 words Fast Read Access Time:– 70 ns for SST39VF401C/402C– 55 ns for SST39LF401C/402C Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 µs (typical) Automatic Write Timing– Internal VPP Generation End-of-Write Detection– Toggle Bits– Data# Polling– Ready/Busy# Pin CMOS I/O Compatibility JEDEC Standard– Flash EEPROM Pinouts and command sets Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (4mm x 6mm) All devices are RoHS compliant
Datasheet

Suppliers

Company
Product
Description
Supplier Links
4Mb 2.7-3.6V Parallel Flash - SST39VF401C - Microchip Technology, Inc.
Chandler, AZ, United States
4Mb 2.7-3.6V Parallel Flash
SST39VF401C
4Mb 2.7-3.6V Parallel Flash SST39VF401C
Additional Features Organized as 256K x16 Single Voltage Read and Write Operations– 2.7-3.6V for SST39VF401C/402C– 3.0-3.6V for SST39LF401C/402C Superior Reliability– Endurance: 100,000 Cycles (Typical)– Greater than 100 years Data Retention Low Power Consumption (typical values at 5 MHz)– Active Current: 5 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical) Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 8 KWord)– Bottom Block-Protection (bottom 8 KWord) Sector-Erase Capability– Uniform 2 KWord sectors Block-Erase Capability– Flexible block architecture; one 8-, two 4-, one 16-, andseven 32-KWord blocks Chip-Erase Capability Erase-Suspend/Erase- Resume Capabilities Hardware Reset Pin (RST#) Latched Address and Data Security-ID Feature– SST: 128 bits; User: 128 words Fast Read Access Time:– 70 ns for SST39VF401C/402C– 55 ns for SST39LF401C/402C Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 µs (typical) Automatic Write Timing– Internal VPP Generation End-of-Write Detection– Toggle Bits– Data# Polling– Ready/Busy# Pin CMOS I/O Compatibility JEDEC Standard– Flash EEPROM Pinouts and command sets Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (4mm x 6mm) All devices are RoHS compliant

Additional Features

  • Organized as 256K x16
  • Single Voltage Read and Write Operations– 2.7-3.6V for SST39VF401C/402C– 3.0-3.6V for SST39LF401C/402C
  • Superior Reliability– Endurance: 100,000 Cycles (Typical)– Greater than 100 years Data Retention
  • Low Power Consumption (typical values at 5 MHz)– Active Current: 5 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)
  • Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 8 KWord)– Bottom Block-Protection (bottom 8 KWord)
  • Sector-Erase Capability– Uniform 2 KWord sectors
  • Block-Erase Capability– Flexible block architecture; one 8-, two 4-, one 16-, andseven 32-KWord blocks
  • Chip-Erase Capability
  • Erase-Suspend/Erase-Resume Capabilities
  • Hardware Reset Pin (RST#)
  • Latched Address and Data
  • Security-ID Feature– SST: 128 bits; User: 128 words
  • Fast Read Access Time:– 70 ns for SST39VF401C/402C– 55 ns for SST39LF401C/402C
  • Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 µs (typical)
  • Automatic Write Timing– Internal VPP Generation
  • End-of-Write Detection– Toggle Bits– Data# Polling– Ready/Busy# Pin
  • CMOS I/O Compatibility
  • JEDEC Standard– Flash EEPROM Pinouts and command sets
  • Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (4mm x 6mm)
  • All devices are RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Memory Chips
Product Number SST39VF401C
Product Name 4Mb 2.7-3.6V Parallel Flash
Memory Category Flash
Access Time 70 ns
Data Retention 100 years
Endurance 100000 Write/Erase Cycles
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882657 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - AS28F128J3A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 115 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details