Microchip Technology, Inc. 4Mb 2.7-3.6V Parallel Flash SST39VF400A

Description
Additional Features Organized as 256K x16 Single Voltage Read and Write Operations – 2.7-3.6V Superior Reliability– Endurance: 100,000 Cycles (typical), Greater than 100 years Data Retention Low Power Consumption (typical values at 14 MHz) Active Current: 9 mA (typical)– Standby Current: 3 µA (typical) Sector-Erase Capability– Uniform 2 KWord sectors Block-Erase Capability– Uniform 32 KWord blocks Fast Read Access Time– 70 ns for SST39VF400A Fast Erase and Word-Program Sector-Erase Time: 18 ms (typical) Block-Erase Time: 18 ms (typical) Chip-Erase Time: 70 ms (typical) Word-Program Time: 14 µs (typical) Chip Rewrite Time:4 seconds (typical) for SST39VF400A Automatic Write Timing– Internal VPP Generation End-of-Write Detection– Toggle Bit– Data# Polling JEDEC Standard– Flash EEPROM Pinouts and command sets Packages Available– 48-lead TSOP (12mm x 20mm), 48-ball TFBGA (6mm x 8mm) , 48-ball WFBGA (4mm x 6mm), 48-bump XFLGA (4mm x 6mm) All non-Pb (lead-free) devices are RoHS compliant
Datasheet
Description
Additional Features Organized as 256K x16 Single Voltage Read and Write Operations – 2.7-3.6V Superior Reliability– Endurance: 100,000 Cycles (typical), Greater than 100 years Data Retention Low Power Consumption (typical values at 14 MHz) Active Current: 9 mA (typical)– Standby Current: 3 µA (typical) Sector-Erase Capability– Uniform 2 KWord sectors Block-Erase Capability– Uniform 32 KWord blocks Fast Read Access Time– 70 ns for SST39VF400A Fast Erase and Word-Program Sector-Erase Time: 18 ms (typical) Block-Erase Time: 18 ms (typical) Chip-Erase Time: 70 ms (typical) Word-Program Time: 14 µs (typical) Chip Rewrite Time:4 seconds (typical) for SST39VF400A Automatic Write Timing– Internal VPP Generation End-of-Write Detection– Toggle Bit– Data# Polling JEDEC Standard– Flash EEPROM Pinouts and command sets Packages Available– 48-lead TSOP (12mm x 20mm), 48-ball TFBGA (6mm x 8mm) , 48-ball WFBGA (4mm x 6mm), 48-bump XFLGA (4mm x 6mm) All non-Pb (lead-free) devices are RoHS compliant
Datasheet

Suppliers

Company
Product
Description
Supplier Links
4Mb 2.7-3.6V Parallel Flash - SST39VF400A - Microchip Technology, Inc.
Chandler, AZ, United States
4Mb 2.7-3.6V Parallel Flash
SST39VF400A
4Mb 2.7-3.6V Parallel Flash SST39VF400A
Additional Features Organized as 256K x16 Single Voltage Read and Write Operations – 2.7-3.6V Superior Reliability– Endurance: 100,000 Cycles (typical), Greater than 100 years Data Retention Low Power Consumption (typical values at 14 MHz) Active Current: 9 mA (typical)– Standby Current: 3 µA (typical) Sector-Erase Capability– Uniform 2 KWord sectors Block-Erase Capability– Uniform 32 KWord blocks Fast Read Access Time– 70 ns for SST39VF400A Fast Erase and Word-Program Sector-Erase Time: 18 ms (typical) Block-Erase Time: 18 ms (typical) Chip-Erase Time: 70 ms (typical) Word-Program Time: 14 µs (typical) Chip Rewrite Time:4 seconds (typical) for SST39VF400A Automatic Write Timing– Internal VPP Generation End-of-Write Detection– Toggle Bit– Data# Polling JEDEC Standard– Flash EEPROM Pinouts and command sets Packages Available– 48-lead TSOP (12mm x 20mm), 48-ball TFBGA (6mm x 8mm) , 48-ball WFBGA (4mm x 6mm), 48-bump XFLGA (4mm x 6mm) All non-Pb (lead-free) devices are RoHS compliant

Additional Features

  • Organized as 256K x16
  • Single Voltage Read and Write Operations – 2.7-3.6V
  • Superior Reliability– Endurance: 100,000 Cycles (typical), Greater than 100 years Data Retention
  • Low Power Consumption (typical values at 14 MHz)
    • Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)
  • Sector-Erase Capability– Uniform 2 KWord sectors
  • Block-Erase Capability– Uniform 32 KWord blocks
  • Fast Read Access Time– 70 ns for SST39VF400A
  • Fast Erase and Word-Program
    • Sector-Erase Time: 18 ms (typical)
    • Block-Erase Time: 18 ms (typical)
    • Chip-Erase Time: 70 ms (typical)
    • Word-Program Time: 14 µs (typical)
    • Chip Rewrite Time:4 seconds (typical) for SST39VF400A
    • Automatic Write Timing– Internal VPP Generation
    • End-of-Write Detection– Toggle Bit– Data# Polling
  • JEDEC Standard– Flash EEPROM Pinouts and command sets
  • Packages Available– 48-lead TSOP (12mm x 20mm), 48-ball TFBGA (6mm x 8mm) , 48-ball WFBGA (4mm x 6mm), 48-bump XFLGA (4mm x 6mm)
    • All non-Pb (lead-free) devices are RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Memory Chips
Product Number SST39VF400A
Product Name 4Mb 2.7-3.6V Parallel Flash
Memory Category Flash
Access Time 70 ns
Endurance 100000 Write/Erase Cycles
Operating Temperature -40 to 85 C (-40 to 185 F)
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