SST39VF400A -- 4MB 2.7-3.6V PARALLEL FLASH
Microchip Technology, Inc.
4Mb 2.7-3.6V Parallel Flash
SST39VF400A
Description
Additional Features
Organized as 256K x16
Single Voltage Read and Write Operations – 2.7-3.6V
Superior Reliability– Endurance: 100,000 Cycles (typical), Greater than 100 years Data Retention
Low Power Consumption (typical values at 14 MHz)
Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)
Sector-Erase Capability– Uniform 2 KWord sectors
Block-Erase Capability– Uniform 32 KWord blocks
Fast Read Access Time– 70 ns for SST39VF400A
Fast Erase and Word-Program
Sector-Erase Time: 18 ms (typical)
Block-Erase Time: 18 ms (typical)
Chip-Erase Time: 70 ms (typical)
Word-Program Time: 14 µs (typical)
Chip Rewrite Time:4 seconds (typical) for SST39VF400A
Automatic Write Timing– Internal VPP Generation
End-of-Write Detection– Toggle Bit– Data# Polling
JEDEC Standard– Flash EEPROM Pinouts and command sets
Packages Available– 48-lead TSOP (12mm x 20mm), 48-ball TFBGA (6mm x 8mm) , 48-ball WFBGA (4mm x 6mm), 48-bump XFLGA (4mm x 6mm)
All non-Pb (lead-free) devices are RoHS compliant
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Microchip Technology, Inc.
Datasheet
Description
Additional Features
Organized as 256K x16
Single Voltage Read and Write Operations – 2.7-3.6V
Superior Reliability– Endurance: 100,000 Cycles (typical), Greater than 100 years Data Retention
Low Power Consumption (typical values at 14 MHz)
Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)
Sector-Erase Capability– Uniform 2 KWord sectors
Block-Erase Capability– Uniform 32 KWord blocks
Fast Read Access Time– 70 ns for SST39VF400A
Fast Erase and Word-Program
Sector-Erase Time: 18 ms (typical)
Block-Erase Time: 18 ms (typical)
Chip-Erase Time: 70 ms (typical)
Word-Program Time: 14 µs (typical)
Chip Rewrite Time:4 seconds (typical) for SST39VF400A
Automatic Write Timing– Internal VPP Generation
End-of-Write Detection– Toggle Bit– Data# Polling
JEDEC Standard– Flash EEPROM Pinouts and command sets
Packages Available– 48-lead TSOP (12mm x 20mm), 48-ball TFBGA (6mm x 8mm) , 48-ball WFBGA (4mm x 6mm), 48-bump XFLGA (4mm x 6mm)
All non-Pb (lead-free) devices are RoHS compliant
Datasheet
Suppliers
Additional Features
Organized as 256K x16
Single Voltage Read and Write Operations – 2.7-3.6V
Superior Reliability– Endurance: 100,000 Cycles (typical), Greater than 100 years Data Retention
Low Power Consumption (typical values at 14 MHz)
Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)
Sector-Erase Capability– Uniform 2 KWord sectors
Block-Erase Capability– Uniform 32 KWord blocks
Fast Read Access Time– 70 ns for SST39VF400A
Fast Erase and Word-Program
Sector-Erase Time: 18 ms (typical)
Block-Erase Time: 18 ms (typical)
Chip-Erase Time: 70 ms (typical)
Word-Program Time: 14 µs (typical)
Chip Rewrite Time:4 seconds (typical) for SST39VF400A
Automatic Write Timing– Internal VPP Generation
End-of-Write Detection– Toggle Bit– Data# Polling
JEDEC Standard– Flash EEPROM Pinouts and command sets
Packages Available– 48-lead TSOP (12mm x 20mm), 48-ball TFBGA (6mm x 8mm) , 48-ball WFBGA (4mm x 6mm), 48-bump XFLGA (4mm x 6mm)
All non-Pb (lead-free) devices are RoHS compliant
Additional Features
- Organized as 256K x16
- Single Voltage Read and Write Operations – 2.7-3.6V
- Superior Reliability– Endurance: 100,000 Cycles (typical), Greater than 100 years Data Retention
- Low Power Consumption (typical values at 14 MHz)
- Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)
- Sector-Erase Capability– Uniform 2 KWord sectors
- Block-Erase Capability– Uniform 32 KWord blocks
- Fast Read Access Time– 70 ns for SST39VF400A
- Fast Erase and Word-Program
- Sector-Erase Time: 18 ms (typical)
- Block-Erase Time: 18 ms (typical)
- Chip-Erase Time: 70 ms (typical)
- Word-Program Time: 14 µs (typical)
- Chip Rewrite Time:4 seconds (typical) for SST39VF400A
- Automatic Write Timing– Internal VPP Generation
- End-of-Write Detection– Toggle Bit– Data# Polling
- JEDEC Standard– Flash EEPROM Pinouts and command sets
- Packages Available– 48-lead TSOP (12mm x 20mm), 48-ball TFBGA (6mm x 8mm) , 48-ball WFBGA (4mm x 6mm), 48-bump XFLGA (4mm x 6mm)
- All non-Pb (lead-free) devices are RoHS compliant
Supplier's Site
Datasheet
Technical Specifications
|
Product Category
|
Memory Chips |
|
Product Number
|
SST39VF400A |
|
Product Name
|
4Mb 2.7-3.6V Parallel Flash |
|
Memory Category
|
Flash
|
|
Access Time
|
70 ns
|
|
Endurance
|
100000 Write/Erase Cycles
|
|
Operating Temperature
|
-40 to 85 C (-40 to 185 F)
|
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