Microchip Technology, Inc. 32Mb 2.7-3.6V Parallel Flash SST39vf3201c

Description
The SST39VF3201C is 2M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF3201C write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pin assignments for x16 memories. Additional Features Organized as 2M x16 Low Power Consumption (typical values at 5 MHz)– Active Current: 6 mA (typical)– Standby Current: 4 µA (typical)– Auto Low Power Mode: 4 µA (typical) Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top two 4-KWord blocks)for SST39VF3202C– Bottom Block-Protection (bottom two 4-KWordblocks) for SST39VF3201C Sector-Erase Capability– Uniform 2 KWord sectors Block-Erase Capability– Flexible block architecture– Eight 4-KWord blocks, 63 32-KWord blocks Chip-Erase Capability Erase-Suspend/Erase- Resume Capabilities Hardware Reset Pin (RST#) Security-ID Feature– SST: 128 bits; User: 128 words Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 35 ms (typical)– Word-Program Time: 7 µs (typical) Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm) All non-Pb (lead-free) devices are RoHS compliant
Datasheet
Description
The SST39VF3201C is 2M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF3201C write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pin assignments for x16 memories. Additional Features Organized as 2M x16 Low Power Consumption (typical values at 5 MHz)– Active Current: 6 mA (typical)– Standby Current: 4 µA (typical)– Auto Low Power Mode: 4 µA (typical) Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top two 4-KWord blocks)for SST39VF3202C– Bottom Block-Protection (bottom two 4-KWordblocks) for SST39VF3201C Sector-Erase Capability– Uniform 2 KWord sectors Block-Erase Capability– Flexible block architecture– Eight 4-KWord blocks, 63 32-KWord blocks Chip-Erase Capability Erase-Suspend/Erase- Resume Capabilities Hardware Reset Pin (RST#) Security-ID Feature– SST: 128 bits; User: 128 words Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 35 ms (typical)– Word-Program Time: 7 µs (typical) Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm) All non-Pb (lead-free) devices are RoHS compliant
Datasheet

Suppliers

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Product
Description
Supplier Links
32Mb 2.7-3.6V Parallel Flash - SST39vf3201c - Microchip Technology, Inc.
Chandler, AZ, United States
32Mb 2.7-3.6V Parallel Flash
SST39vf3201c
32Mb 2.7-3.6V Parallel Flash SST39vf3201c
The SST39VF3201C is 2M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF3201C write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pin assignments for x16 memories. Additional Features Organized as 2M x16 Low Power Consumption (typical values at 5 MHz)– Active Current: 6 mA (typical)– Standby Current: 4 µA (typical)– Auto Low Power Mode: 4 µA (typical) Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top two 4-KWord blocks)for SST39VF3202C– Bottom Block-Protection (bottom two 4-KWordblocks) for SST39VF3201C Sector-Erase Capability– Uniform 2 KWord sectors Block-Erase Capability– Flexible block architecture– Eight 4-KWord blocks, 63 32-KWord blocks Chip-Erase Capability Erase-Suspend/Erase- Resume Capabilities Hardware Reset Pin (RST#) Security-ID Feature– SST: 128 bits; User: 128 words Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 35 ms (typical)– Word-Program Time: 7 µs (typical) Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm) All non-Pb (lead-free) devices are RoHS compliant

The SST39VF3201C is 2M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF3201C write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pin assignments for x16 memories.

Additional Features

  • Organized as 2M x16
  • Low Power Consumption (typical values at 5 MHz)– Active Current: 6 mA (typical)– Standby Current: 4 µA (typical)– Auto Low Power Mode: 4 µA (typical)
  • Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top two 4-KWord blocks)for SST39VF3202C– Bottom Block-Protection (bottom two 4-KWordblocks) for SST39VF3201C
  • Sector-Erase Capability– Uniform 2 KWord sectors
  • Block-Erase Capability– Flexible block architecture– Eight 4-KWord blocks, 63 32-KWord blocks
  • Chip-Erase Capability
  • Erase-Suspend/Erase-Resume Capabilities
  • Hardware Reset Pin (RST#)
  • Security-ID Feature– SST: 128 bits; User: 128 words
  • Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 35 ms (typical)– Word-Program Time: 7 µs (typical)
  • Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)
  • All non-Pb (lead-free) devices are RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Memory Chips
Product Number SST39vf3201c
Product Name 32Mb 2.7-3.6V Parallel Flash
Memory Category Flash
Access Time 70 ns
Endurance 100000 Write/Erase Cycles
Operating Temperature -40 to 85 C (-40 to 185 F)
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