Microchip Technology, Inc. 16Mb 2.7-3.6V Parallel Flash SST39VF1681

Description
The SST39VF1681 is a 2M x8 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1681 writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x8 memories. Additional Features Organized as 2M x8 Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical) Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 64 KByte)for SST39VF1682– Bottom Block-Protection (bottom 64 KByte)for SST39VF1681 Sector-Erase Capability– Uniform 4 KByte sectors Block-Erase Capability– Uniform 64 KByte blocks Chip-Erase Capability Erase-Suspend/Erase- Resume Capabilities Hardware Reset Pin (RST#) Security-ID Feature– SST: 128 bits; User: 128 bits Fast Erase and Byte-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Byte-Program Time: 7 µs (typical) Packages Available– 48-ball TFBGA (6mm x 8mm)– 48-lead TSOP (12mm x 20mm) All non-Pb (lead-free) devices are RoHS compliant
Datasheet
Description
The SST39VF1681 is a 2M x8 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1681 writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x8 memories. Additional Features Organized as 2M x8 Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical) Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 64 KByte)for SST39VF1682– Bottom Block-Protection (bottom 64 KByte)for SST39VF1681 Sector-Erase Capability– Uniform 4 KByte sectors Block-Erase Capability– Uniform 64 KByte blocks Chip-Erase Capability Erase-Suspend/Erase- Resume Capabilities Hardware Reset Pin (RST#) Security-ID Feature– SST: 128 bits; User: 128 bits Fast Erase and Byte-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Byte-Program Time: 7 µs (typical) Packages Available– 48-ball TFBGA (6mm x 8mm)– 48-lead TSOP (12mm x 20mm) All non-Pb (lead-free) devices are RoHS compliant
Datasheet

Suppliers

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Product
Description
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16Mb 2.7-3.6V Parallel Flash - SST39VF1681 - Microchip Technology, Inc.
Chandler, AZ, United States
16Mb 2.7-3.6V Parallel Flash
SST39VF1681
16Mb 2.7-3.6V Parallel Flash SST39VF1681
The SST39VF1681 is a 2M x8 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1681 writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x8 memories. Additional Features Organized as 2M x8 Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical) Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 64 KByte)for SST39VF1682– Bottom Block-Protection (bottom 64 KByte)for SST39VF1681 Sector-Erase Capability– Uniform 4 KByte sectors Block-Erase Capability– Uniform 64 KByte blocks Chip-Erase Capability Erase-Suspend/Erase- Resume Capabilities Hardware Reset Pin (RST#) Security-ID Feature– SST: 128 bits; User: 128 bits Fast Erase and Byte-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Byte-Program Time: 7 µs (typical) Packages Available– 48-ball TFBGA (6mm x 8mm)– 48-lead TSOP (12mm x 20mm) All non-Pb (lead-free) devices are RoHS compliant

The SST39VF1681 is a 2M x8 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1681 writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x8 memories.

Additional Features

  • Organized as 2M x8
  • Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)
  • Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 64 KByte)for SST39VF1682– Bottom Block-Protection (bottom 64 KByte)for SST39VF1681
  • Sector-Erase Capability– Uniform 4 KByte sectors
  • Block-Erase Capability– Uniform 64 KByte blocks
  • Chip-Erase Capability
  • Erase-Suspend/Erase-Resume Capabilities
  • Hardware Reset Pin (RST#)
  • Security-ID Feature– SST: 128 bits; User: 128 bits
  • Fast Erase and Byte-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Byte-Program Time: 7 µs (typical)
  • Packages Available– 48-ball TFBGA (6mm x 8mm)– 48-lead TSOP (12mm x 20mm)
  • All non-Pb (lead-free) devices are RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Memory Chips
Product Number SST39VF1681
Product Name 16Mb 2.7-3.6V Parallel Flash
Memory Category Flash
Access Time 70 ns
Endurance 100000 Write/Erase Cycles
Operating Temperature -40 to 85 C (-40 to 185 F)
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