Microchip Technology, Inc. 16Mb 2.7-3.6V Parallel Flash SST39VF1602C

Description
The SST39VF1602C device is 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1602C writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories. Additional Features Organized as 1M x16: SST39VF1601C/1602C Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical) Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 8 KWord)– Bottom Block-Protection (bottom 8 KWord) Sector-Erase Capability– Uniform 2 KWord sectors Block-Erase Capability– Flexible block architecture; one 8-, two 4-, one16-, and thirty one 32-KWord blocks Chip-Erase Capability Erase-Suspend/Erase- Resume Capabilities Hardware Reset Pin (RST#) Security-ID Feature– SST: 128 bits; User: 128 words Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 µs (typical) Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (4mm x 6mm) All devices are RoHS compliant
Datasheet
Description
The SST39VF1602C device is 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1602C writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories. Additional Features Organized as 1M x16: SST39VF1601C/1602C Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical) Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 8 KWord)– Bottom Block-Protection (bottom 8 KWord) Sector-Erase Capability– Uniform 2 KWord sectors Block-Erase Capability– Flexible block architecture; one 8-, two 4-, one16-, and thirty one 32-KWord blocks Chip-Erase Capability Erase-Suspend/Erase- Resume Capabilities Hardware Reset Pin (RST#) Security-ID Feature– SST: 128 bits; User: 128 words Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 µs (typical) Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (4mm x 6mm) All devices are RoHS compliant
Datasheet

Suppliers

Company
Product
Description
Supplier Links
16Mb 2.7-3.6V Parallel Flash - SST39VF1602C - Microchip Technology, Inc.
Chandler, AZ, United States
16Mb 2.7-3.6V Parallel Flash
SST39VF1602C
16Mb 2.7-3.6V Parallel Flash SST39VF1602C
The SST39VF1602C device is 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1602C writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories. Additional Features Organized as 1M x16: SST39VF1601C/1602C Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical) Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 8 KWord)– Bottom Block-Protection (bottom 8 KWord) Sector-Erase Capability– Uniform 2 KWord sectors Block-Erase Capability– Flexible block architecture; one 8-, two 4-, one16-, and thirty one 32-KWord blocks Chip-Erase Capability Erase-Suspend/Erase- Resume Capabilities Hardware Reset Pin (RST#) Security-ID Feature– SST: 128 bits; User: 128 words Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 µs (typical) Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (4mm x 6mm) All devices are RoHS compliant

The SST39VF1602C device is 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1602C writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.

Additional Features

  • Organized as 1M x16: SST39VF1601C/1602C
  • Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)
  • Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 8 KWord)– Bottom Block-Protection (bottom 8 KWord)
  • Sector-Erase Capability– Uniform 2 KWord sectors
  • Block-Erase Capability– Flexible block architecture; one 8-, two 4-, one16-, and thirty one 32-KWord blocks
  • Chip-Erase Capability
  • Erase-Suspend/Erase-Resume Capabilities
  • Hardware Reset Pin (RST#)
  • Security-ID Feature– SST: 128 bits; User: 128 words
  • Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 µs (typical)
  • Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (4mm x 6mm)
  • All devices are RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Memory Chips
Product Number SST39VF1602C
Product Name 16Mb 2.7-3.6V Parallel Flash
Memory Category Flash
Access Time 70 ns
Endurance 100000 Write/Erase Cycles
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882878 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Controllers - DP8422AV-20 - Quarktwin Technology Ltd.
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 84-LCC (J-Lead)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers
Memory - 448-S25FL064P0XMFA000-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category Flash
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 64000 kbits
View Details
4 suppliers
Memory - AS4SD8M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 64000 kbits
View Details