Microchip Technology, Inc. 2Mb 2.7-3.6V Parallel Flash SST39VF020

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2Mb 2.7-3.6V Parallel Flash - SST39VF020 - Microchip Technology, Inc.
Chandler, AZ, United States
2Mb 2.7-3.6V Parallel Flash
SST39VF020
2Mb 2.7-3.6V Parallel Flash SST39VF020
The SST39VF020 is a 256K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF020 device writes (Program or Erase) with a 2.7-3.6V power supply. The device conforms to JEDEC standard pinouts for x8 memories. Additional Features Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8 Single Voltage Read and Write Operations– 3.0-3.6V for SST39LF512/010/020/0 40– 2.7-3.6V for SST39VF512/010/020/0 40 Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention Low Power Consumption(typical values at 14 MHz)– Active Current: 5 mA (typical)– Standby Current: 1 µA (typical) Sector-Erase Capability– Uniform 4 KByte sectors Fast Read Access Time: 45 ns ; 55 ns ; 70 ns Latched Address and Data Fast Erase and Byte-Program:– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:4 seconds (typical) for SST39LF/VF020 Automatic Write Timing– Internal VPP Generation End-of-Write Detection– Toggle Bit– Data# Polling CMOS I/O Compatibility JEDEC Standard– Flash EEPROM Pinouts and command sets Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 48-ball TFBGA (6mm x 8mm)– 34-ball WFBGA (4mm x 6mm) for 1M and 2M All devices are RoHS compliant

The SST39VF020 is a 256K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF020 device writes (Program or Erase) with a 2.7-3.6V power supply. The device conforms to JEDEC standard pinouts for x8 memories.

Additional Features

  • Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
  • Single Voltage Read and Write Operations– 3.0-3.6V for SST39LF512/010/020/040– 2.7-3.6V for SST39VF512/010/020/040
  • Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
  • Low Power Consumption(typical values at 14 MHz)– Active Current: 5 mA (typical)– Standby Current: 1 µA (typical)
  • Sector-Erase Capability– Uniform 4 KByte sectors
  • Fast Read Access Time: 45 ns ; 55 ns ; 70 ns
  • Latched Address and Data
  • Fast Erase and Byte-Program:– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:4 seconds (typical) for SST39LF/VF020
  • Automatic Write Timing– Internal VPP Generation
  • End-of-Write Detection– Toggle Bit– Data# Polling
  • CMOS I/O Compatibility
  • JEDEC Standard– Flash EEPROM Pinouts and command sets
  • Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 48-ball TFBGA (6mm x 8mm)– 34-ball WFBGA (4mm x 6mm) for 1M and 2M
  • All devices are RoHS compliant
Supplier's Site Datasheet
Memory - SST39VF020-70-4I-WHE-T - Nova Technology(HK) Co.,Ltd
Futian District, Shenzhen, China
FLASH - NOR Memory IC 2Mb (256K x 8) Parallel 70 ns 32-TSOP

FLASH - NOR Memory IC 2Mb (256K x 8) Parallel 70 ns 32-TSOP

Supplier's Site Datasheet
Memory - SST39VF020-70-4C-NHE - Nova Technology(HK) Co.,Ltd
Futian District, Shenzhen, China
FLASH Memory IC 2Mb (256K x 8) Parallel 70 ns 32-PLCC (11.43x13.97)

FLASH Memory IC 2Mb (256K x 8) Parallel 70 ns 32-PLCC (11.43x13.97)

Supplier's Site Datasheet
Memory - SST39VF020-70-4I-NHE - Nova Technology(HK) Co.,Ltd
Futian District, Shenzhen, China
FLASH Memory IC 2Mb (256K x 8) Parallel 70 ns 32-PLCC (11.43x13.97)

FLASH Memory IC 2Mb (256K x 8) Parallel 70 ns 32-PLCC (11.43x13.97)

Supplier's Site Datasheet
Memory - SST39VF020-70-4I-WHE - Nova Technology(HK) Co.,Ltd
Futian District, Shenzhen, China
FLASH Memory IC 2Mb (256K x 8) Parallel 70 ns 32-TSOP

FLASH Memory IC 2Mb (256K x 8) Parallel 70 ns 32-TSOP

Supplier's Site Datasheet
Memory - SST39VF020-70-4C-WHE-T - Nova Technology(HK) Co.,Ltd
Futian District, Shenzhen, China
FLASH Memory IC 2Mb (256K x 8) Parallel 70 ns 32-TSOP

FLASH Memory IC 2Mb (256K x 8) Parallel 70 ns 32-TSOP

Supplier's Site Datasheet
Memory - SST39VF020-70-4I-B3KE - Nova Technology(HK) Co.,Ltd
Futian District, Shenzhen, China
FLASH Memory IC 2Mb (256K x 8) Parallel 70 ns 48-TFBGA

FLASH Memory IC 2Mb (256K x 8) Parallel 70 ns 48-TFBGA

Supplier's Site
Memory - SST39VF020-70-4C-WHE - Nova Technology(HK) Co.,Ltd
Futian District, Shenzhen, China
FLASH Memory IC 2Mb (256K x 8) Parallel 70 ns 32-TSOP

FLASH Memory IC 2Mb (256K x 8) Parallel 70 ns 32-TSOP

Supplier's Site Datasheet
Memory - SST39VF020-70-4C-NHE-T - Nova Technology(HK) Co.,Ltd
Futian District, Shenzhen, China
FLASH Memory IC 2Mb (256K x 8) Parallel 70 ns 32-PLCC (11.43x13.97)

FLASH Memory IC 2Mb (256K x 8) Parallel 70 ns 32-PLCC (11.43x13.97)

Supplier's Site Datasheet
Memory - SST39VF020-70-4I-NHE-T - Nova Technology(HK) Co.,Ltd
Futian District, Shenzhen, China
FLASH - NOR Memory IC 2Mb (256K x 8) Parallel 70 ns 32-PLCC (11.43x13.97)

FLASH - NOR Memory IC 2Mb (256K x 8) Parallel 70 ns 32-PLCC (11.43x13.97)

Supplier's Site Datasheet
Memory - SST39VF020-70-4C-B3KE - Nova Technology(HK) Co.,Ltd
Futian District, Shenzhen, China
FLASH Memory IC 2Mb (256K x 8) Parallel 70 ns 48-TFBGA

FLASH Memory IC 2Mb (256K x 8) Parallel 70 ns 48-TFBGA

Supplier's Site

Technical Specifications

  Microchip Technology, Inc. Nova Technology(HK) Co.,Ltd Nova Technology(HK) Co.,Ltd Nova Technology(HK) Co.,Ltd Nova Technology(HK) Co.,Ltd Nova Technology(HK) Co.,Ltd Nova Technology(HK) Co.,Ltd
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number SST39VF020 SST39VF020-70-4I-WHE-T SST39VF020-70-4C-NHE SST39VF020-70-4I-NHE SST39VF020-70-4C-WHE-T SST39VF020-70-4I-B3KE SST39VF020-70-4C-B3KE
Product Name 2Mb 2.7-3.6V Parallel Flash Memory Memory Memory Memory Memory Memory
Memory Category Flash Flash Flash Flash Flash Flash Flash
Data Rate 0 MHz
Access Time 70 ns
Endurance 100000 Write/Erase Cycles
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