The SST38VF6401 is a 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) manufactured with SST proprietary, high-performance CMOS Super- Flash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST38VF6401 writes (Program or Erase) with a 2.7-3.6V power supply. This device conforma to JEDEC standard pin assignments for x16 memories.
Additional Features
Organized as 4M x16
Single Voltage Read and Write Operations– 2.7-3.6V
Superior Reliability– Endurance: up to 100,000 Cycles minimum– Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)– Active Current: 4 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)
128-bit Unique ID
Security-ID Feature– 256 Word, user One-Time-Programmabl
e
Protection and Security Features– Hardware Boot Block Protection/WP# Input Pin,Uniform (32 KWord) and Non-Uniform (8 KWord)options available– User-controlled individual block (32 KWord) protection,using software only methods– Password protection
Hardware Reset Pin (RST#)
Fast Read and Page Read Access Times:– 90 ns Read access time– 25 ns Page Read access times- 4-Word Page Read buffer
Latched Address and Data
Fast Erase Times:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)
Erase-Suspend/-Resum
e Capabilities
Fast Word and Write-Buffer ProgrammingTimes:– Word-Program Time: 7 µs (typical)– Write Buffer Programming Time: 1.75 µs / Word(typical)- 16-Word Write Buffer
Automatic Write Timing– Internal VPP Generation
End-of-Write Detection– Toggle Bits– Data# Polling– RY/BY# Output
CMOS I/O Compatibility
JEDEC Standard– Flash EEPROM Pinouts and command sets
CFI Compliant
Packages Available– 48-lead TSOP– 48-ball TFBGA
All non-Pb (lead-free) devices are RoHS compliant
The SST38VF6401 is a 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) manufactured with SST proprietary, high-performance CMOS Super- Flash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST38VF6401 writes (Program or Erase) with a 2.7-3.6V power supply. This device conforma to JEDEC standard pin assignments for x16 memories.
Additional Features
- Organized as 4M x16
- Single Voltage Read and Write Operations– 2.7-3.6V
- Superior Reliability– Endurance: up to 100,000 Cycles minimum– Greater than 100 years Data Retention
- Low Power Consumption (typical values at 5 MHz)– Active Current: 4 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)
- 128-bit Unique ID
- Security-ID Feature– 256 Word, user One-Time-Programmable
- Protection and Security Features– Hardware Boot Block Protection/WP# Input Pin,Uniform (32 KWord) and Non-Uniform (8 KWord)options available– User-controlled individual block (32 KWord) protection,using software only methods– Password protection
- Hardware Reset Pin (RST#)
- Fast Read and Page Read Access Times:– 90 ns Read access time– 25 ns Page Read access times- 4-Word Page Read buffer
- Latched Address and Data
- Fast Erase Times:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)
- Erase-Suspend/-Resume Capabilities
- Fast Word and Write-Buffer ProgrammingTimes:– Word-Program Time: 7 µs (typical)– Write Buffer Programming Time: 1.75 µs / Word(typical)- 16-Word Write Buffer
- Automatic Write Timing– Internal VPP Generation
- End-of-Write Detection– Toggle Bits– Data# Polling– RY/BY# Output
- CMOS I/O Compatibility
- JEDEC Standard– Flash EEPROM Pinouts and command sets
- CFI Compliant
- Packages Available– 48-lead TSOP– 48-ball TFBGA
- All non-Pb (lead-free) devices are RoHS compliant
