The SST38VF6401RT is a 4M x16, Radiation Tolerant device manufactured with Microchip’s proprietary, high-performance CMOS Super-Flash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. This process achieves an unbiased 100Krad of radiation tolerance. The SST38VF6401RT writes (Program or Erase) with a 3.0 to 3.6V power supply and conforms to JEDEC standard pinouts and command sets for x16 flash memories.
Additional Features
Main Characteristics
Organized as 4M x16
Superior Reliability : Endurance: up to 10,000 Cycles minimum / Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz) : Active Current: 4 mA (typical) / Standby Current: 3 µA (typical) / Auto Low Power Mode: 3 µA (typical)
Security-ID Feature : 256 Word, user One-Time-Programmabl
e / 128-bit Unique ID
Protection and Security Features : Hardware Boot Block Protection/WP# Input Pin,Uniform (32 KWord) and Non-Uniform (8 KWord) options available / User-controlled individual block (32 KWord) protection,using software only methods / Password protection
Hardware Reset Pin (RST#)
Fast Read and Page Read Access Times: 90 ns Read access time / 25 ns Page Read access times / 4-Word Page Read buffer
Latched Address and Data
Fast Erase Times: Sector-Erase Time: 18 ms (typical) / Block-Erase Time: 18 ms (typical) / Chip-Erase Time: 40 ms (typical)
Erase-Suspend/-Resum
e Capabilities
Fast Word and Write-Buffer ProgrammingTimes: Word-Program Time: 7 µs (typical) / Write Buffer Programming Time: 1.75 µs Word(typical) / 16-Word Write Buffer
Automatic Write Timing : Internal VPP Generation
End-of-Write Detection : Toggle Bits / Data# Polling / RY/BY# Output
CMOS I/O Compatibility
JEDEC Standard: Flash EEPROM Pinouts and command sets
CFI Compliant
Voltage
Single Voltage Read and Write Operations 3.0-3.6V
Radiation Performances
No Single Event Latch-up Below a LET Threshold of 78 MeV.cm2 /mg @125°C
SEU Rate < 1 x 10-16 upsets/bit-day
SEFI Threshold > 60 MeV.cm2 /mg (LET)
Total ionizing dose of 50kRad (Biased) / 100kRad (Unbiased)
Packages
48-lead TSOP
48-lead Ceramic dual flat pack
The SST38VF6401RT is a 4M x16, Radiation Tolerant device manufactured with Microchip’s proprietary, high-performance CMOS Super-Flash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. This process achieves an unbiased 100Krad of radiation tolerance. The SST38VF6401RT writes (Program or Erase) with a 3.0 to 3.6V power supply and conforms to JEDEC standard pinouts and command sets for x16 flash memories.
Additional Features
- Main Characteristics
- Organized as 4M x16
- Superior Reliability : Endurance: up to 10,000 Cycles minimum / Greater than 100 years Data Retention
- Low Power Consumption (typical values at 5 MHz) : Active Current: 4 mA (typical) / Standby Current: 3 µA (typical) / Auto Low Power Mode: 3 µA (typical)
- Security-ID Feature : 256 Word, user One-Time-Programmable / 128-bit Unique ID
- Protection and Security Features : Hardware Boot Block Protection/WP# Input Pin,Uniform (32 KWord) and Non-Uniform (8 KWord) options available / User-controlled individual block (32 KWord) protection,using software only methods / Password protection
- Hardware Reset Pin (RST#)
- Fast Read and Page Read Access Times: 90 ns Read access time / 25 ns Page Read access times / 4-Word Page Read buffer
- Latched Address and Data
- Fast Erase Times: Sector-Erase Time: 18 ms (typical) / Block-Erase Time: 18 ms (typical) / Chip-Erase Time: 40 ms (typical)
- Erase-Suspend/-Resume Capabilities
- Fast Word and Write-Buffer ProgrammingTimes: Word-Program Time: 7 µs (typical) / Write Buffer Programming Time: 1.75 µs Word(typical) / 16-Word Write Buffer
- Automatic Write Timing : Internal VPP Generation
- End-of-Write Detection : Toggle Bits / Data# Polling / RY/BY# Output
- CMOS I/O Compatibility
- JEDEC Standard: Flash EEPROM Pinouts and command sets
- CFI Compliant
- Voltage
- Single Voltage Read and Write Operations 3.0-3.6V
- Radiation Performances
- No Single Event Latch-up Below a LET Threshold of 78 MeV.cm2 /mg @125°C
- SEU Rate < 1 x 10-16 upsets/bit-day
- SEFI Threshold > 60 MeV.cm2 /mg (LET)
- Total ionizing dose of 50kRad (Biased) / 100kRad (Unbiased)
- Packages
- 48-lead TSOP
- 48-lead Ceramic dual flat pack
