SST25VF512 SPI serial flash memory is manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
Additional Features
Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3
Low Power Consumption:– Active Read Current: 7 mA (typical)– Standby Current: 8 µA (typical)
Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks
Fast Erase and Byte-Program:– Chip-Erase Time: 70 ms (typical)– Sector- or Block-Erase Time: 18 ms (typical)– Byte-Program Time: 14 µs (typical)
Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations
Packages Available– 8-lead SOIC (4.9mm x 6mm)– 8-contact WSON
All non-Pb (lead-free) devices are RoHS compliant
SST25VF512 SPI serial flash memory is manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
Additional Features
- Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3
- Low Power Consumption:– Active Read Current: 7 mA (typical)– Standby Current: 8 µA (typical)
- Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks
- Fast Erase and Byte-Program:– Chip-Erase Time: 70 ms (typical)– Sector- or Block-Erase Time: 18 ms (typical)– Byte-Program Time: 14 µs (typical)
- Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations
- Packages Available– 8-lead SOIC (4.9mm x 6mm)– 8-contact WSON
- All non-Pb (lead-free) devices are RoHS compliant
