The 25 series Serial Flash family features a four-wire, SPIcompatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF020B devices are enhanced with improved operating frequency and even lower power consumption. SST25VF020B SPI serial flash memories are manufactured with SST proprietary, highperformance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
Additional Features
Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3
Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
Low Power Consumption:– Active Read Current: 10 mA (typical)– Standby Current: 5 µA (typical)
Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks– Uniform 64 KByte overlay blocks
Fast Erase and Byte-Program:– Chip-Erase Time: 35 ms (typical)– Sector-/Block-Erase Time: 18 ms (typical)– Byte-Program Time: 7 µs (typical)
Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations
Packages Available– 8-lead SOIC (150 mils)– 8-contact WSON (6mm x 5mm) - 8-contact TDFN (2mm x 3mm)
All non-Pb (lead-free) devices are RoHS compliant
The 25 series Serial Flash family features a four-wire, SPIcompatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF020B devices are enhanced with improved operating frequency and even lower power consumption. SST25VF020B SPI serial flash memories are manufactured with SST proprietary, highperformance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
Additional Features
- Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3
- Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
- Low Power Consumption:– Active Read Current: 10 mA (typical)– Standby Current: 5 µA (typical)
- Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks– Uniform 64 KByte overlay blocks
- Fast Erase and Byte-Program:– Chip-Erase Time: 35 ms (typical)– Sector-/Block-Erase Time: 18 ms (typical)– Byte-Program Time: 7 µs (typical)
- Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations
- Packages Available– 8-lead SOIC (150 mils)– 8-contact WSON (6mm x 5mm) - 8-contact TDFN (2mm x 3mm)
- All non-Pb (lead-free) devices are RoHS compliant
