The SST serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF020 SPI serial flash memories are manufactured with SST proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
For product comparison, please consider: SST25LF020A
Additional Features
Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3
Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
Low Power Consumption:– Active Read Current: 7 mA (typical)– Standby Current: 8 µA (typical)
Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks
Fast Erase and Byte-Program:– Chip-Erase Time: 70 ms (typical)– Sector- or Block-Erase Time: 18 ms (typical)– Byte-Program Time: 14 µs (typical)
Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations
Packages Available– 8-lead SOIC 150 mil body width– 8-contact WSON (5mm x 6mm)
All non-Pb (lead-free) devices are RoHS compliant
The SST serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF020 SPI serial flash memories are manufactured with SST proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
For product comparison, please consider: SST25LF020A
Additional Features
- Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3
- Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
- Low Power Consumption:– Active Read Current: 7 mA (typical)– Standby Current: 8 µA (typical)
- Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks
- Fast Erase and Byte-Program:– Chip-Erase Time: 70 ms (typical)– Sector- or Block-Erase Time: 18 ms (typical)– Byte-Program Time: 14 µs (typical)
- Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations
- Packages Available– 8-lead SOIC 150 mil body width– 8-contact WSON (5mm x 6mm)
- All non-Pb (lead-free) devices are RoHS compliant
