Microchip Technology, Inc. 1Mb 2.7-3.6V SPI Serial Flash SST25VF010A

Description
SST's serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. Additional Features Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3 Low Power Consumption:– Active Read Current: 7 mA (typical)– Standby Current: 8 µA (typical) Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks Fast Erase and Byte-Program:– Chip-Erase Time: 70 ms (typical)– Sector- or Block-Erase Time: 18 ms (typical)– Byte-Program Time: 14 µs (typical) Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations Packages Available– 8-lead SOIC 150 mil body width– 8-contact WSON (5mm x 6mm) - 8-bump XFBGA All non-Pb (lead-free) devices are RoHS compliant
Datasheet
Description
SST's serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. Additional Features Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3 Low Power Consumption:– Active Read Current: 7 mA (typical)– Standby Current: 8 µA (typical) Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks Fast Erase and Byte-Program:– Chip-Erase Time: 70 ms (typical)– Sector- or Block-Erase Time: 18 ms (typical)– Byte-Program Time: 14 µs (typical) Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations Packages Available– 8-lead SOIC 150 mil body width– 8-contact WSON (5mm x 6mm) - 8-bump XFBGA All non-Pb (lead-free) devices are RoHS compliant
Datasheet

Suppliers

Company
Product
Description
Supplier Links
1Mb 2.7-3.6V SPI Serial Flash - SST25VF010A - Microchip Technology, Inc.
Chandler, AZ, United States
1Mb 2.7-3.6V SPI Serial Flash
SST25VF010A
1Mb 2.7-3.6V SPI Serial Flash SST25VF010A
SST's serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. Additional Features Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3 Low Power Consumption:– Active Read Current: 7 mA (typical)– Standby Current: 8 µA (typical) Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks Fast Erase and Byte-Program:– Chip-Erase Time: 70 ms (typical)– Sector- or Block-Erase Time: 18 ms (typical)– Byte-Program Time: 14 µs (typical) Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations Packages Available– 8-lead SOIC 150 mil body width– 8-contact WSON (5mm x 6mm) - 8-bump XFBGA All non-Pb (lead-free) devices are RoHS compliant

SST's serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

Additional Features

    • Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3
    • Low Power Consumption:– Active Read Current: 7 mA (typical)– Standby Current: 8 µA (typical)
    • Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks
    • Fast Erase and Byte-Program:– Chip-Erase Time: 70 ms (typical)– Sector- or Block-Erase Time: 18 ms (typical)– Byte-Program Time: 14 µs (typical)
    • Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations
    • Packages Available– 8-lead SOIC 150 mil body width– 8-contact WSON (5mm x 6mm) - 8-bump XFBGA
    • All non-Pb (lead-free) devices are RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Memory Chips
Product Number SST25VF010A
Product Name 1Mb 2.7-3.6V SPI Serial Flash
Memory Category Flash
Data Rate 33 MHz
Endurance 100000 Write/Erase Cycles
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 520966231016 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - 71256TTSA15YG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Density 256 kbits
View Details
Flash Memory - 1882794 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - SMJ44C256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details