The 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25PF040C devices are enhanced with extended operating voltage of 2.3-3.6V. SST25PF040C SPI serial flash memories are manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
Additional Features
Single Voltage Read and Write Operations- 2.3–3.6V
Serial Interface Architecture- SPI Compatible: Mode 0 and Mode 3
Dual Input/Output I/O Support
High Speed Clock Frequency up to 40 MHz
Superior Reliability:
Endurance: 100,000 Cycles (typical)
Greater than 20 years Data Retention
Low Power Consumption:
Active Read Current: 5 mA (typical)
Standby Current: 5 µA (typical)
Power-down Mode: 3µA (typical)
Flexible Erase Capability
Uniform 4 KByte sectors
Uniform 64 KByte overlay blocks
Fast Erase and Byte-Program:
Sector-Erase Time: 40 ms (typical)
Byte-Program Time: 4 ms/256 bytes (typical)
Page Program Mode - 256 Bytes/Page
End-of-Write Detection- Software polling the BUSY bit in Status Register
Hold Pin (HOLD#)- Suspends a serial sequence to the memorywithout deselecting the device
Write Protection (WP#)- Enables/Disables the Lock-Down function of the status register
Software Write Protection- Write protection through Block-Protection bits instatus register
Temperature Range- Industrial: -40°C to +85°C
Packages Available-
8-lead SOIC (150 mils)
8-contact WDFN (6mm x 5mm)
8-contact USON (2mm x 3mm)
All devices are RoHS compliant
The 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25PF040C devices are enhanced with extended operating voltage of 2.3-3.6V.
SST25PF040C SPI serial flash memories are manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
Additional Features
- Single Voltage Read and Write Operations- 2.3–3.6V
- Serial Interface Architecture- SPI Compatible: Mode 0 and Mode 3
- Dual Input/Output I/O Support
- High Speed Clock Frequency up to 40 MHz
- Superior Reliability:
- Endurance: 100,000 Cycles (typical)
- Greater than 20 years Data Retention
- Low Power Consumption:
- Active Read Current: 5 mA (typical)
- Standby Current: 5 µA (typical)
- Power-down Mode: 3µA (typical)
- Flexible Erase Capability
- Uniform 4 KByte sectors
- Uniform 64 KByte overlay blocks
- Fast Erase and Byte-Program:
- Sector-Erase Time: 40 ms (typical)
- Byte-Program Time: 4 ms/256 bytes (typical)
- Page Program Mode - 256 Bytes/Page
- End-of-Write Detection- Software polling the BUSY bit in Status Register
- Hold Pin (HOLD#)- Suspends a serial sequence to the memorywithout deselecting the device
- Write Protection (WP#)- Enables/Disables the Lock-Down function of the status register
- Software Write Protection- Write protection through Block-Protection bits instatus register
- Temperature Range- Industrial: -40°C to +85°C
- Packages Available-
- 8-lead SOIC (150 mils)
- 8-contact WDFN (6mm x 5mm)
- 8-contact USON (2mm x 3mm)
- All devices are RoHS compliant
