The ARF1505 is an N-channel enhancement mode RF power MOSFET designed for high-power amplifier applications up to 40 MHz at 300 V drain-source operating voltage. It delivers 750 W output power with 17 dB gain and greater than 75% efficiency at 27.12 MHz. The device is housed in a ceramic package with a beryllium oxide (BeO) insulating substrate and has a maximum junction temperature of 175°C. Thermal resistance from junction to case is 0.10°C/W. It supports a drain-source breakdown voltage of 1200 V and continuous drain current of 25 A at 25°C. The part is RoHS compliant and features nitride passivation for reliability. Electrostatic discharge sensitivity requires proper handling.
The ARF family of RF power MOSFETs is optimized for applications requiring frequencies as high as 150 MHz and operating voltages as high as 400V. Historically, RF power MOSFETs were limited to applications of 50V or less. This limitation has been removed by combining Microchip’s high-voltage MOSFET technology with RF-specific die geometries.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RF-MOSFET-1200V |
| Product Name | 1200V RF MOSFET |
