MMA052AA is a self-biased gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobili
ty transistor (pHEMT) distributed amplifier in die form that operates between DC and 26 GHz. It is ideal for test instrumentation, wideband military and space applications. The amplifier provides a 15 dB of gain with a rising slope, 3.5 dB noise figure, and 27 dBm of output power at 3 dB gain compression with the nominal bias of 235 mA from a 10 V supply. Output IP3 is typically 35 dBm. The MMA052AA amplifier is DC coupled and features RF I/Os that are internally matched to 50 Ω.
MMA053AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT distributed power amplifier die that operates between DC and 8 GHz. The amplifier provides 17 dB of gain, +43 dBm output IP3, and +31 dBm of output power at 3 dB compression, while requiring only 410 mA from a 11 V supply. Gain flatness over the DC to 8 GHz frequency range varies by only ±0.5 dB, making the MMA053AA die ideal for EW, ECM, radar, and test equipment applications. The MMA053AA amplifier features compact die size and I/Os that are internally matched to 50 ?, facilitating easy integration into multi-chip modules (MCMs).
MMA052AA is a self-biased gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobility transistor (pHEMT) distributed amplifier in die form that operates between DC and 26 GHz. It is ideal for test instrumentation, wideband military and space applications. The amplifier provides a 15 dB of gain with a rising slope, 3.5 dB noise figure, and 27 dBm of output power at 3 dB gain compression with the nominal bias of 235 mA from a 10 V supply. Output IP3 is typically 35 dBm. The MMA052AA amplifier is DC coupled and features RF I/Os that are internally matched to 50 Ω.
MMA053AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT distributed power amplifier die that operates between DC and 8 GHz. The amplifier provides 17 dB of gain, +43 dBm output IP3, and +31 dBm of output power at 3 dB compression, while requiring only 410 mA from a 11 V supply. Gain flatness over the DC to 8 GHz frequency range varies by only ±0.5 dB, making the MMA053AA die ideal for EW, ECM, radar, and test equipment applications. The MMA053AA amplifier features compact die size and I/Os that are internally matched to 50 ?, facilitating easy integration into multi-chip modules (MCMs).
