Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs AUIRF3805L

Description
AUIRF3805L - 55V-60V N-Channel Automotive MOSFET
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Suppliers

Company
Product
Description
Supplier Links
 - AUIRF3805L - Rochester Electronics
Newburyport, MA, United States
AUIRF3805L - 55V-60V N-Channel Automotive MOSFET

AUIRF3805L - 55V-60V N-Channel Automotive MOSFET

Supplier's Site Datasheet
 - AUIRF3805L - Rochester Electronics
Newburyport, MA, United States
AUIRF3805L - 55V-60V N-Channel Automotive MOSFET

AUIRF3805L - 55V-60V N-Channel Automotive MOSFET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AUIRF3805L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AUIRF3805L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AUIRF3805L
MOSFET N-CH 55V 160A TO262

MOSFET N-CH 55V 160A TO262

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1182855-AUIRF3805L - Win Source Electronics
Yishun, Singapore
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1182855-AUIRF3805L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1182855-AUIRF3805L
Win Source Part Number: 1182855-AUIRF3805L Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HEXFET® Package: Bulk Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262 Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): SP001522082; ECCN: EAR99 Fake Threat In the Open Market: 49 pct. HTSUS: 8541.29.0095 Mfr: International Rectifier Other Names: INFIRFAUIRF3805L,215 6-AUIRF3805L Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1182855-AUIRF3805L
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: HEXFET®
Package: Bulk
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SP001522082;
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
HTSUS: 8541.29.0095
Mfr: International Rectifier
Other Names: INFIRFAUIRF3805L,2156-AUIRF3805L
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
 - 7377442 - RS Components, Ltd.
Corby, Northants, United Kingdom
Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Channel Type = N Maximum Continuous Drain Current = 210 A Maximum Drain Source Voltage = 55 V Maximum Drain Source Resistance = 3.3 mOhms Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Gate Source Voltage = -20 V, +20 V Package Type = I2PAK (TO-262) Mounting Type = Through Hole Pin Count = 3

Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = N
Maximum Continuous Drain Current = 210 A
Maximum Drain Source Voltage = 55 V
Maximum Drain Source Resistance = 3.3 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = I2PAK (TO-262)
Mounting Type = Through Hole
Pin Count = 3

Supplier's Site
 - 9128595 - RS Components, Ltd.
Corby, Northants, United Kingdom
Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Channel Type = N Maximum Continuous Drain Current = 210 A Maximum Drain Source Voltage = 55 V Maximum Drain Source Resistance = 3.3 mOhms Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Gate Source Voltage = -20 V, +20 V Package Type = I2PAK (TO-262) Mounting Type = Through Hole Pin Count = 3

Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = N
Maximum Continuous Drain Current = 210 A
Maximum Drain Source Voltage = 55 V
Maximum Drain Source Resistance = 3.3 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = I2PAK (TO-262)
Mounting Type = Through Hole
Pin Count = 3

Supplier's Site
 - 7377442P - RS Components, Ltd.
Corby, Northants, United Kingdom
Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Channel Type = N Maximum Continuous Drain Current = 210 A Maximum Drain Source Voltage = 55 V Maximum Drain Source Resistance = 3.3 mOhms Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Gate Source Voltage = -20 V, +20 V Package Type = I2PAK (TO-262) Mounting Type = Through Hole Pin Count = 3 Delivery on production packaging - Tube. This product is non-returnable.

Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = N
Maximum Continuous Drain Current = 210 A
Maximum Drain Source Voltage = 55 V
Maximum Drain Source Resistance = 3.3 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = I2PAK (TO-262)
Mounting Type = Through Hole
Pin Count = 3
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
Sheung Wan, Hong Kong
MOSFET AUTO 55V 1 N-CH HEXFET 3.3mOhms

MOSFET AUTO 55V 1 N-CH HEXFET 3.3mOhms

Buy Now Datasheet
Discrete Semiconductor - AUIRF3805L - LIXINC Electronics Co., Limited
Hong Kong, China
Discrete Semiconductor
AUIRF3805L
Discrete Semiconductor AUIRF3805L
MOSFET N-CH 55V 160A TO262

MOSFET N-CH 55V 160A TO262

Supplier's Site Datasheet
Single FETs, MOSFETs - AUIRF3805L-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AUIRF3805L-ND
Single FETs, MOSFETs AUIRF3805L-ND
N-Channel 55V 160A (Tc) 300W (Tc) Through Hole TO-262

N-Channel 55V 160A (Tc) 300W (Tc) Through Hole TO-262

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Technical Specifications

  Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Win Source Electronics RS Components, Ltd. VAST STOCK CO., LIMITED LIXINC Electronics Co., Limited DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF MOSFET Transistors Transistors
Product Number AUIRF3805L AUIRF3805L 1182855-AUIRF3805L 7377442 AUIRF3805L AUIRF3805L AUIRF3805L-ND
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Single FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel N-Channel
Package Type TO-262 TO-262-3 Long Leads, I2PAK, TO-262AA SOT3 I2PAK (TO-262) TO-262-3 Long Leads, I虏Pak, TO-262AA TO-262-3 Long Leads, I2PAK, TO-262AA
Packing Method Tube; Tube Tube; Tube Bulk; Bulk
PD 300000 milliwatts 300000 milliwatts
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