AUIRF3805L - 55V-60V N-Channel Automotive MOSFET
AUIRF3805L - 55V-60V N-Channel Automotive MOSFET
MOSFET N-CH 55V 160A TO262
Win Source Part Number: 1182855-AUIRF3805L
Category: Discrete Semiconductor Products>Transistors
Series: HEXFET®
Package: Bulk
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SP001522082;
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
HTSUS: 8541.29.0095
Mfr: International Rectifier
Other Names: INFIRFAUIRF3805L,215
Drive Voltage (Max Rds On, Min Rds On): 10V
Infineons comprehensive portfolio of AECQ-101 Automotive-qualified
Channel Type = N
Maximum Continuous Drain Current = 210 A
Maximum Drain Source Voltage = 55 V
Maximum Drain Source Resistance = 3.3 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = I2PAK (TO-262)
Mounting Type = Through Hole
Pin Count = 3
Infineons comprehensive portfolio of AECQ-101 Automotive-qualified
Channel Type = N
Maximum Continuous Drain Current = 210 A
Maximum Drain Source Voltage = 55 V
Maximum Drain Source Resistance = 3.3 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = I2PAK (TO-262)
Mounting Type = Through Hole
Pin Count = 3
Infineons comprehensive portfolio of AECQ-101 Automotive-qualified
Channel Type = N
Maximum Continuous Drain Current = 210 A
Maximum Drain Source Voltage = 55 V
Maximum Drain Source Resistance = 3.3 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = I2PAK (TO-262)
Mounting Type = Through Hole
Pin Count = 3
Delivery on production packaging - Tube. This product is non-returnable.
MOSFET AUTO 55V 1 N-CH HEXFET 3.3mOhms
MOSFET N-CH 55V 160A TO262
N-Channel 55V 160A (Tc) 300W (Tc) Through Hole TO-262
Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Win Source Electronics | RS Components, Ltd. | VAST STOCK CO., LIMITED | LIXINC Electronics Co., Limited | DigiKey | |
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Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF MOSFET Transistors | Transistors |
Product Number | AUIRF3805L | AUIRF3805L | 1182855-AUIRF3805L | 7377442 | AUIRF3805L | AUIRF3805L | AUIRF3805L-ND |
Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor | Single FETs, MOSFETs | ||
Polarity | N-Channel | N-Channel | N-Channel | N-Channel | |||
Package Type | TO-262 | TO-262-3 Long Leads, I2PAK, TO-262AA | SOT3 | I2PAK (TO-262) | TO-262-3 Long Leads, I虏Pak, TO-262AA | TO-262-3 Long Leads, I2PAK, TO-262AA | |
Packing Method | Tube; Tube | Tube; Tube | Bulk; Bulk | ||||
PD | 300000 milliwatts | 300000 milliwatts |