Microchip Technology, Inc. Single FETs, MOSFETs MSC025SMB120SDT/R

1200V, 25 mΩ typical (at VGS = 18V) silicon carbide N-channel MOSFET in a TO-263 7-lead XL package with a source sense, designed for high-efficiency switching applications. The device supports continuous drain current of 81 A at 25°C and 57 A at 100°C, with a maximum junction temperature of 175°C and a junction-to-case thermal resistance of 0.32-0.42 °C/W. It features low gate charge (109 nC), fast switching with typical turn-off energy of 98 µJ, and 100% UIS avalanche energy testing up to 1100 mJ. The body diode has a forward voltage of 3.5 V at 18 A and reverse recovery charge of 314 nC. It is RoHS compliant and qualified for industrial and AEC-Q101 applications.